R6030ENZ1 Nch 600V 30A Power MOSFET
Data Sheet lOutline
VDSS
600V
RDS(on) (Max.)
0.130W
ID
30A
PD
120W
TO-247
(1) (2)
lFeatures
(3)
lInner circuit
1) Low on-resistance.
3) Gate-source voltage (VGSS) guaranteed to be 20V.
(1) Gate (2) Drain (3) Source
4) Drive circuits can be simple.
*1 BODY DIODE
2) Fast switching speed.
5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant
lPackaging specifications Packaging
lApplication
Type
Switching Power Supply
Tube
Reel size (mm)
-
Tape width (mm)
-
Basic ordering unit (pcs)
450
Taping code
C9
Marking
R6030ENZ1
lAbsolute maximum ratings (Ta = 25°C) Parameter
Symbol
Value
Unit
VDSS
600
V
Tc = 25°C
ID *1
30
A
Tc = 100°C
ID *1
16.3
A
80
A
Drain - Source voltage Continuous drain current Pulsed drain current
ID,pulse
*2
Gate - Source voltage
VGSS
20
V
Avalanche energy, single pulse
EAS *3
636
mJ
Avalanche energy, repetitive
EAR *3
0.96
mJ
Avalanche current, repetitive
IAR
5.2
A
Power dissipation (Tc = 25°C)
PD
120
W
Junction temperature
Tj
150
°C
Tstg
-55 to +150
°C
dv/dt *4
15
V/ns
Range of storage temperature Reverse diode dv/dt
www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved.
1/12
2014.03 - Rev.B
Data Sheet
R6030ENZ1 lAbsolute maximum ratings Parameter
Symbol
Drain - Source voltage slope
dv/dt
Conditions VDS = 480V Tj = 25°C
Values
Unit
50
V/ns
lThermal resistance Parameter
Symbol
Values Min.
Typ.
Max.
Unit
Thermal resistance, junction - case
RthJC
-
-
1.04
°C/W
Thermal resistance, junction - ambient
RthJA
-
-
30
°C/W
Soldering temperature, wavesoldering for 10s
Tsold
-
-
265
°C
lElectrical characteristics (Ta = 25°C) Parameter Drain - Source breakdown voltage
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
600
-
-
V
Tj = 25°C
-
0.1
100
mA
Tj = 125°C
-
-
1000
IGSS
VGS = 20V, VDS = 0V
-
-
100
nA
VGS (th)
VDS = 10V, ID = 1mA
2
-
4
V
-
0.115
0.130
W
Tj = 125°C
-
0.255
-
f = 1MHz, open drain
-
3.6
-
V(BR)DSS
VGS = 0V, ID = 1mA VDS = 600V, VGS = 0V
Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage
IDSS
VGS = 10V, ID = 14.5A Static drain - source on - state resistance Gate input resistance
www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved.
RDS(on) *5 Tj = 25°C
RG
2/12
W
2014.03 - Rev.B
Data Sheet
R6030ENZ1 lElectrical characteristics (Ta = 25°C) Parameter
Symbol
Conditions
Values Min.
Typ.
Max.
Transconductance
gfs *5
VDS = 10V, ID = 15A
8
16
-
Input capacitance
Ciss
VGS = 0V
-
2100
-
Output capacitance
Coss
VDS = 25V
-
1900
-
Reverse transfer capacitance
Crss
f = 1MHz
-
190
-
Effective output capacitance, energy related
Co(er)
-
82
-
Effective output capacitance, time related Turn - on delay time Rise time Turn - off delay time Fall time
Co(tr)
VGS = 0V VDS = 0V to 480V
S
pF
pF -
400
-
VDD ⋍ 300V, VGS = 10V
-
40
-
tr *5
ID = 15A
-
55
-
td(off) *5
RL = 20W
-
190
-
tf *5
RG = 10W
-
60
-
td(on) *5
Unit
ns
lGate Charge characteristics (Ta = 25°C) Parameter
Symbol
Conditions
Values Min.
Typ.
Max.
Total gate charge
Qg *5
VDD ⋍ 300V
-
85
-
Gate - Source charge
Qgs *5
ID = 30A
-
15
-
Gate - Drain charge
Qgd *5
VGS = 10V
-
45
-
Gate plateau voltage
V(plateau)
VDD ⋍ 300V, ID = 30A
-
6.5
-
Unit
nC
V
*1 Limited only by maximum temperature allowed. *2 PW 10ms, Duty cycle 1% *3 ID = 5.2A, VDD = 50V *4 Reference measurement circuits Fig.5-1. *5 Pulsed
www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved.
3/12
2014.03 - Rev.B
Data Sheet
R6030ENZ1 lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter
Symbol
Inverse diode continuous, forward current
Values
Conditions
IS *1
Unit
Min.
Typ.
Max.
-
-
30
A
-
-
80
A
-
-
1.5
V
-
660
-
ns
-
15
-
mC
-
45
-
A
Tc = 25°C Inverse diode direct current, pulsed
ISM *2
Forward voltage
VSD *5
Reverse recovery time
trr *5
Reverse recovery charge
Qrr *5
Peak reverse recovery current
Irrm *5
VGS = 0V, IS = 30A IS = 30A di/dt = 100A/ms
lTypical Transient Thermal Characteristics Symbol
Value
Rth1
0.190
Rth2
0.429
Rth3
0.250
www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved.
Unit
K/W
4/12
Symbol
Value
Cth1
0.0143
Cth2
0.322
Cth3
14.7
Unit
Ws/K
2014.03 - Rev.B
Data Sheet
R6030ENZ1 lElectrical characteristic curves
Power Dissipation : PD/PD max. [%]
120 100 80 60 40 20 0
0
50
100
150
200
Normalized Transient Thermal Resistance : r(t)
Fig.1 Power Dissipation Derating Curve
Fig.2 Normalized Transient Thermal Resistance vs. Pulse Width 1000 100 10
Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 30ºC/W
1 0.1 0.01
top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single
0.001 0.0001 0.00001 0.0001 0.001 0.01
0.1
1
10
100 1000
Pulse Width : PW [s]
Junction Temperature : Tj [°C]
Avalanche Energy : EAS / EAS max. [%]
Fig.3 Avalanche Energy Derating Curve vs Junction Temperature 120 100 80 60 40 20 0
0
25
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved.
5/12
2014.03 - Rev.B
Data Sheet
R6030ENZ1 lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
30
VGS= 10.0V VGS= 8.0V
VGS= 7.0V VGS= 6.0V
Drain Current : ID [A]
12
Ta=25ºC Pulsed
VGS= 5.0V
9
6
3
0
VGS= 4.5V
0
1
2
3
VGS= 6.0V VGS= 10.0V VGS= 8.0V VGS= 7.0V
25
Drain Current : ID [A]
15
Fig.5 Typical Output Characteristics(II)
20
VGS= 5.0V 15 10 5
4
0
5
VGS= 4.5V
0
Drain - Source Voltage : VDS [V]
Drain Current : ID [A]
12
30
VGS= 5.5V VGS= 5.0V VGS= 6.0V
9
VGS= 4.5V
6
1
2
3
4
20
50
VGS= 5.5V
15
VGS= 5.0V
10
0
5
Drain - Source Voltage : VDS [V]
www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved.
40
VGS= 6.0V
VGS= 7.0V VGS= 6.5V
VGS= 4.5V
5
Ta=150ºC Pulsed 0
30
VGS= 10.0V VGS= 8.0V
25
3
0
20
Fig.7 Tj = 150°C Typical Output Characteristics(II)
Drain Current : ID [A]
VGS= 10.0V VGS= 8.0V VGS= 7.0V VGS= 6.5V
10
Drain - Source Voltage : VDS [V]
Fig.6 Tj = 150°C Typical Output Characteristics(I)
15
Ta=25ºC Pulsed
Ta=150ºC Pulsed 0
10
20
30
40
50
Drain - Source Voltage : VDS [V]
6/12
2014.03 - Rev.B
Data Sheet
R6030ENZ1
Fig.8 Breakdown Voltage vs. Junction Temperature
Fig.9 Typical Transfer Characteristics 100
900
VDS= 10V
850 10
800
Drain Current : ID [A]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
lElectrical characteristic curves
750 700 650 600
1
0.1
Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC
0.01
550 500
-50 -25
0
25
50
75
0.001
100 125 150
0
Junction Temperature : Tj [°C]
Fig.10 Gate Threshold Voltage vs. Junction Temperature
6
8
10
Fig.11 Transconductance vs. Drain Current 100
VDS= 10V ID= 1mA
VDS= 10V
Transconductance : gfs [S]
Gate Threshold Voltage : VGS(th) [V]
4
Gate - Source Voltage : VGS [V]
4.0
3.5
3.0
2.5
2.0
2
-50 -25
0
25
50
75
1
0.1
0.01 0.01
100 125 150
Junction Temperature : Tj [°C]
www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved.
10
Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC
0.1
1
10
100
Drain Current : ID [A]
7/12
2014.03 - Rev.B
Data Sheet
R6030ENZ1 lElectrical characteristic curves
400 Ta=25ºC
350 300 250
ID = 14.5A
200
ID = 30A
150 100 50 0
0
5
10
15
Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [mW]
Static Drain - Source On-State Resistance : RDS(on) [mW]
Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage
20
400 350
VGS= 10V ID = 14.5A
300 250 200 150 100 50 0 -50 -25
Gate - Source Voltage : VGS [V]
10000
50
75
100 125 150
Fig.15 Static Drain - Source On - State Resistance vs. Drain Current 10000
Static Drain - Source On-State Resistance : RDS(on) [mW]
Static Drain - Source On-State Resistance : RDS(on) [mW]
25
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State Resistance vs. Drain Current Ta=25ºC
1000
VGS= 10V 100
10
0
0.01
0.1
1
10
100
Drain Current : ID [A]
www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved.
VGS= 10V
1000
100
10
Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.01
0.1
1
10
100
Drain Current : ID [A]
8/12
2014.03 - Rev.B
Data Sheet
R6030ENZ1 lElectrical characteristic curves
Fig.16 Typical Capacitance vs. Drain - Source Voltage
Fig.17 Coss Stored Energy 20
Capacitance : C [pF]
10000
Coss Stored Energy : EOSS [uJ]
100000
Ciss
1000 Coss
100
10
1
Ta=25ºC f = 1MHz VGS = 0V 0.01
0.1
Crss 1
10
100
16 14 12 10 8 6 4 2 0
1000
Ta=25ºC
18
0
Drain - Source Voltage : VDS [V]
600
Fig.19 Dynamic Input Characteristics 20
100000 Ta = 25ºC VDD = 300V VGS = 10V RG= 10W
10000
Gate - Source Voltage : VGS [V]
Switching Time : t [ns]
400
Drain - Source Voltage : VDS [V]
Fig.18 Switching Characteristics
td(off)
1000
tf td(on)
100
10 tr 1
200
0.01
0.1
1
10
16 14 12 10 8 6 4
Ta = 25ºC VDD= 300V ID= 30A
2 0
100
0
20 40 60 80 100 120 140 160 180 200
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved.
18
9/12
2014.03 - Rev.B
Data Sheet
R6030ENZ1 lElectrical characteristic curves
Fig.21 Reverse Recovery Time vs.Inverse Diode Forward Current
100
10000 VGS=0V
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
Fig.20 Inverse Diode Forward Current vs. Source - Drain Voltage
10
1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC
0.1
0.01
0.0
0.5
1.0
100 Ta=25ºC di / dt = 100A / ms VGS = 0V 10
1.5
Source - Drain Voltage : VSD [V]
www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved.
1000
0.1
1
10
100
Inverse Diode Forward Current : IS [A]
10/12
2014.03 - Rev.B
Data Sheet
R6030ENZ1 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit
Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit
Fig.5-2 di/dt Waveform
www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved.
11/12
2014.03 - Rev.B
Data Sheet
R6030ENZ1 lDimensions (Unit : mm)
TO-247
DIM A A1 A2 b b1 b2 c D D1 E e N L L1 ΦP Q S
MILIMETERS MIN MAX 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.20 0.61 0.80 20.80 21.34 17.43 17.83 15.75 16.13 5.45 3.00 19.81 20.57 3.81 4.32 3.55 3.65 5.59 6.20 6.15
INCHES MIN 0.190 0.090 0.075 0.045 0.075 0.115 0.024 0.819 0.686 0.620
MAX 0.205 0.100 0.085 0.055 0.087 0.126 0.031 0.840 0.702 0.635 0.215 3.000
0.780 0.150 0.140 0.220
0.810 0.170 0.144 0.244 0.240
Dimension in mm / inches
www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved.
12/12
2014.03 - Rev.B
Notice
Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System http://www.rohm.com/contact/
www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved.
R1102A
