SCT3030KL Datasheet
N-channel SiC power MOSFET lOutline
VDSS
1200V
RDS(on) (Typ.)
30mW
ID
72A
PD
339W
TO-247N
(1)(2)(3)
lInner circuit lFeatures
(1) Gate (2) Drain (3) Source
1) Low on-resistance 2) Fast switching speed
*1 Body Diode
3) Fast reverse recovery 4) Easy to parallel lPackaging specifications
5) Simple to drive
Packing
Tube
6) Pb-free lead plating ; RoHS compliant Reel size (mm)
-
Tape width (mm)
-
Type
lApplication
Basic ordering unit (pcs)
・Solar inverters
Taping code
・DC/DC converters
30 C11
Marking
SCT3030KL
・Switch mode power supplies ・Induction heating ・Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current
Value
Unit
VDSS
1200
V
Tc = 25°C
ID
*1
72
A
Tc = 100°C
ID *1
51
A
ID,pulse *2
180
A
VGSS
-4 to +22
V
-4 to +26
V
0 / +18
V
Tj
175
°C
Tstg
-55 to +175
°C
Pulsed drain current Gate - Source voltage (DC) Gate-Source Surge Voltage (tsurge < 300nsec)
VGSS_surge
Recommended Drive Voltage
VGS_op
Junction temperature Range of storage temperature
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Symbol
1/12
*4
*3
TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005
Datasheet
SCT3030KL lThermal resistance Values Parameter
Symbol RthJC
Thermal resistance, junction - case
Unit Min.
Typ.
Max.
-
0.34
0.44
C/W
lElectrical characteristics (Ta = 25°C) Values Parameter
Drain - Source breakdown voltage
Symbol
V(BR)DSS
Conditions
Unit Min.
Typ.
Max.
1200
-
-
V
Tj = 25°C
-
1
10
mA
Tj = 150°C
-
2
-
VGS = 0V, ID = 1mA VDS = 1200V, VGS = 0V
Zero gate voltage drain current
IDSS
Gate - Source leakage current
IGSS+
VGS = +22V, VDS = 0V
-
-
100
nA
Gate - Source leakage current
IGSS-
VGS = -4V, VDS = 0V
-
-
-100
nA
2.7
-
5.6
V
-
30
39
mW
Tj = 125°C
-
45
-
f = 1MHz, open drain
-
5
-
Gate threshold voltage
VGS (th)
VDS = 10V, ID = 13.3mA VGS = 18V, ID = 27A
Static drain - source on - state resistance
Gate input resistance
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RDS(on) *5 Tj = 25°C
RG
2/12
W
TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005
Datasheet
SCT3030KL lElectrical characteristics (Ta = 25°C) Values Parameter
Symbol
Conditions
Unit Min.
Typ.
Max.
Transconductance
gfs *5
VDS = 10V, ID = 27A
-
10.8
-
Input capacitance
Ciss
VGS = 0V
-
2222
-
Output capacitance
Coss
VDS = 800V
-
180
-
Reverse transfer capacitance
Crss
f = 1MHz
-
72
-
Effective output capacitance, energy related
Co(er)
VGS = 0V VDS = 0V to 600V
-
157
-
Turn - on delay time
td(on) *5
VDD = 400V, ID = 18A
-
24
-
VGS = 18V/0V
-
42
-
td(off) *5
RL = 22W
-
61
-
tf *5
RG = 0W
-
29
-
-
468
-
Rise time
tr
Turn - off delay time Fall time Turn - on switching loss
Turn - off switching loss
*5
Eon *5
Eoff *5
S
pF
pF
ns
VDD = 600V, ID=27A VGS = 18V/0V RG = 0W L=250mH *Eon includes diode reverse recovery
mJ -
204
-
lGate Charge characteristics (Ta = 25°C) Values Parameter
Symbol
Conditions
Unit Min.
Typ.
Max.
Total gate charge
Qg *5
VDD = 600V
-
131
-
Gate - Source charge
Qgs *5
ID = 27A
-
30
-
Gate - Drain charge
Qgd
VGS = 18V
-
55
-
VDD = 600V, ID = 27A
-
9.6
-
Gate plateau voltage
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*5
V(plateau)
3/12
nC
V
TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005
Datasheet
SCT3030KL lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter
Inverse diode continuous, forward current
Symbol
IS
Conditions
*1
Unit Min.
Typ.
Max.
-
-
72
A
-
-
180
A
-
3.2
-
V
-
27
-
ns
-
135
-
nC
-
10
-
A
Tc = 25°C Inverse diode direct current, pulsed
ISM *2
Forward voltage
VSD *5
Reverse recovery time
trr *5
Reverse recovery charge
Qrr *5
Peak reverse recovery current
Irrm
VGS = 0V, IS = 27A IF = 27A, VR = 600V di/dt = 1100A/ms
*5
*1 Limited only by maximum temperature allowed. *2 PW 10ms, Duty cycle 1% *3 Example of acceptable Vgs waveform
*4 Please be advised not to use SiC-MOSFETs with Vgs below 13V as doing so may cause thermal runaway. *5 Pulsed
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TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005
Datasheet
SCT3030KL lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
400
1000 Operation in this area is limited by RDS(ON)
PW = 100µs 300
Drain Current : ID [A]
Power Dissipation : PD [W]
350
250 200 150 100
100
PW = 1ms
10
PW = 10ms 1
PW = 100ms
50
Ta = 25ºC Single Pulse 0.1
0 0
50
100
150
0.1
200
Case Temperature : TC [°C]
1
10
100
1000
10000
Drain - Source Voltage : VDS [V]
Transient Thermal Resistance : Rth [K/W]
Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 1
0.1
0.01 Ta = 25ºC Single Pulse 0.001 0.0001
0.001
0.01
0.1
1
10
Pulse Width : PW [s]
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TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005
Datasheet
SCT3030KL lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Fig.5 Typical Output Characteristics(II) 35
70 20V 18V 16V
50
30
12V
14V
Drain Current : ID [A]
Drain Current : ID [A]
60
20V
Ta = 25ºC Pulsed
40 30 10V
20 10
18V 16V
25 12V
20
10V 15 10 VGS= 8V
5
VGS= 8V
0
0 0
2
4
6
8
10
0
Drain - Source Voltage : VDS [V]
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Fig.6 Tj = 150ºC Typical Output Characteristics(I)
Fig.7 Tj = 150ºC Typical Output Characteristics(II) 35
70
30
18V
60
14V
16V
Drain Current : ID [A]
12V 40 30 VGS= 8V
20 10
10V
16V 10V
50
14V 12V
20V 18V
20V
Drain Current : ID [A]
Ta = 25ºC Pulsed
14V
25 20 15 VGS= 8V 10 5
Ta = 150ºC Pulsed
Ta = 150ºC Pulsed
0
0 0
2
4
6
8
0
10
Drain - Source Voltage : VDS [V]
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1
2
3
4
5
Drain - Source Voltage : VDS [V]
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TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005
Datasheet
SCT3030KL lElectrical characteristic curves
Fig.8 Typical Transfer Characteristics (I)
Fig.9 Typical Transfer Characteristics (II) 70
100
VDS = 10V Pulsed
60
10
Drain Current : ID [A]
Drain Current : ID [A]
VDS = 10V Pulsed
Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC
1
0.1
50 40 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC
30 20 10 0
0.01 0
2
4
6
8
0
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
6
8
10 12 14 16 18 20
Fig.11 Transconductance vs. Drain Current
6
10 VDS = 10V ID = 13.3mA
5
VDS = 10V Pulsed
Transconductance : gfs [S]
Gate Threshold Voltage : V GS(th) [V]
4
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltage vs. Junction Temperature
4 3 2 1 0 -50
2
1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC
0.1 0
50
100
150
0.1
200
Junction Temperature : Tj [ºC]
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1
10
Drain Current : ID [A]
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Datasheet
SCT3030KL lElectrical characteristic curves
Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature
0.12
Static Drain - Source On-State Resistance : RDS(on) [W]
Static Drain - Source On-State Resistance : RDS(on) [W]
Fig.12 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Ta = 25ºC Pulsed
0.11 0.1 0.09 0.08 0.07 0.06
ID = 48A
0.05 0.04
ID = 27A
0.03 0.02 0.01 0 6
8
10
12
14
16
18
20
22
Gate - Source Voltage : VGS [V]
0.12 0.11 0.1
VGS = 18V Pulsed
0.09 0.08 0.07 0.06 0.05
ID = 48A
0.04 0.03
ID = 27A
0.02 0.01 0 -50
0
50
100
150
200
Junction Temperature : Tj [ºC]
Static Drain - Source On-State Resistance : RDS(on) [W]
Fig.14 Static Drain - Source On - State Resistance vs. Drain Current 0.1
Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC
VGS = 18V Pulsed 0.01 1
10
100
Drain Current : ID [A]
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Datasheet
SCT3030KL lElectrical characteristic curves
Fig.15 Typical Capacitance vs. Drain - Source Voltage
Fig.16 Coss Stored Energy 50
10000
Coss Stored Energy : EOSS [mJ]
Capacitance : C [pF]
1000 Coss 100
Ta = 25ºC
45
Ciss
Crss
10 Ta = 25ºC f = 1MHz VGS = 0V
40 35 30 25 20 15 10 5 0
1 0.1
1
10
100
0
1000
Drain - Source Voltage : VDS [V]
600
800
Fig.18 Dynamic Input Characteristics
10000
20
1000
Gate - Source Voltage : VGS [V]
Ta = 25ºC VDD = 400V VGS = 18V RG = 0W Pulsed
tf
Switching Time : t [ns]
400
Drain - Source Voltage : VDS [V]
Fig.17 Switching Characteristics
100
200
td(off) tr td(on)
10
1
Ta = 25ºC VDD = 600V ID = 27A Pulsed
15
10
5
0 0.1
1
10
100
0
Drain Current : ID [A]
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20
40
60
80
100
120
140
Total Gate Charge : Qg [nC]
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TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005
Datasheet
SCT3030KL lElectrical characteristic curves
Fig.19 Typical Switching Loss vs. Drain - Source Voltage
Fig.20 Typical Switching Loss vs. Drain Current
1000
4000 Ta = 25ºC ID=27A VGS = 18V/0V RG=0W L=250mH
800 700
Ta = 25ºC VDD=600V VGS = 18V/0V RG=0W L=250mH
3600
Switching Energy : E [mJ]
Switching Energy : E [mJ]
900
Eon
600 500 400 Eoff
300 200
3200 2800 2400 2000
Eon
1600 1200 800
Eoff
400
100
0
0 200
400
600
800
0
1000
Drain - Source Voltage : VDS [V]
10
20
30
40
50
60
70
Drain Current : ID [A]
Fig.21 Typical Switching Loss vs. External Gate Resistance 4000
Switching Energy : E [mJ]
3600
Ta = 25ºC VDD=600V ID=27A VGS = 18V/0V L=250mH
3200 2800 2400 2000
Eon
1600 1200
Eoff
800 400 0 0
5
10
15
20
25
30
External Gate Resistance : RG [W]
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TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005
Datasheet
SCT3030KL lElectrical characteristic curves
Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current
Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage
1000
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
100 VGS = 0V Pulsed
10
1
Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC
0.1
Ta = 25ºC di / dt = 1100A / us VR = 600V VGS = 0V Pulsed
100
10
0.01 0
1
2
3
4
5
6
7
1
8
Source - Drain Voltage : VSD [V]
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10
100
Inverse Diode Forward Current : IS [A]
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TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005
Datasheet
SCT3030KL lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit
Fig.3-2 Switching Waveforms Eon = ID×VDS
Same type device as D.U.T.
VDS
Irr
Eoff = ID×VDS Vsurge
D.U.T. ID ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
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TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005
Notice
Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.
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R1102S
