SiC Power Module Datasheet
BSM120D12P2C005 Application
Circuit diagram
Motor drive
1
Inverter, Converter 10 9 8(N.C)
Photovoltaics, wind power generation.
3,4
Induction heating equipment. 5 6 7(N.C)
Features
2
1) Low surge, low switching loss.
*Do not connect anything to NC pin.
2) High-speed switching possible. 3) Reduced temperature dependence.
Construction This product is a half bridge module consisting of SiC-DMOS and SiC-SBD from ROHM.
Dimensions & Pin layout (Unit : mm)
3
10 9 8
7 6 5
4
1
2
(M2.6 FOR SELF-TAPPING SCREW)
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2018.02 - Rev.E
Datasheet
BSM120D12P2C005 Absolute maximum ratings (Tj = 25°C) Parameter Drain-source voltage Gate-source voltage() Gate-source voltage() G - S voltage (tsurge<300nsec) Drain current *1 Source current *1 Total power disspation *3 Max Junction Temperature Junction temperature Storage temperature
Symbol VDSS G-S short VGSS VGSSsurge ID IDRM IS ISRM Ptot Tjmax Tj Tstg
Conditions
D-S short D-S short DC(Tc=60°C) Pulse (Tc=60°C) 1ms *2 DC(Tc =60°C) VGS=18V Pulse (Tc=60°C) 1ms VGS=18V *2 Tc=25°C
Limit 1200 22 6 10 to 26 134 240 134 240 935 175 40 to150 40 to125
Unit V V V V A A A A W °C °C °C
Terminals to baseplate, Vrms 2500 f=60Hz AC 1min. 4.5 Main Terminals : M6 screw N·m Mounting torque Mounting to heat shink : M5 screw 3.5 N·m (*1) Case temperature (Tc) is defined on the surface of base plate just under the chips. (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. (*3) Tj is less than 175°C Isolation voltage
Visol
Example of acceptable VGS waveform 26V tsurge
22V
0V
tsurge
6V 10V
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2018.02 - Rev.E
Datasheet
BSM120D12P2C005 Electrical characteristics (Tj=25°C) Parameter Symbol On-state static Drain-Source Voltage Drain Cutoff Current
Conditions
VDS(on) ID=120A, VGS=18V IDSS
VSD VGS=18V, IS=120A
Gate-Source Threshold Voltage
Gate-Source Leak Current
Switching Characteristics
Input Capacitance Gate Registance Stray Inductance Creepage Distance Clearance Distance
Typ. 2.1 3.1 3.4
Max. 3.2 4.6 5.2
Unit
2
mA
1.6 0.5
1.7 2.2 2.4 1.3 1.7 1.8 2.3 45 50 30 170 60 14 1.8 25 11.5 19.0 9.5 13.0
2.1 2.7 3.2 4 0.5 0.16 0.21
VDS=1200V, VGS=0V VGS=0V, IS=120A
Souce-Drain Voltage
Tj=25°C Tj=125°C Tj=150°C
Min.
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
VGS(th) VDS=10V, ID=22mA VGS=22V, VDS=0V IGSS VGS= 6V, VDS=0V td(on) VGS(on)=18V, VGS(off)=0V tr VDS=600V trr ID=120A td(off) RG=3.9 tf inductive load Ciss VDS=10V, VGS=0V, f=1MHz RGint Tj=25°C Ls Terminal to heat sink Terminal to terminal Terminal to heat sink Terminal to terminal *4 Rth(j-c) DMOSFET (1/2 module) SBD (1/2 module) *4 Case to heat sink, per 1 module, Rth(c-f) Thermal grease appied *5
V
V
V A
ns
nF nH mm mm mm mm
Junction-to-Case Thermal Resistance °C/W Case-to-heat sink 0.035 Thermal resistance (*4) Measurement of Tc is to be done at the point just under the chip. (*6) Typical value is measured by using thermally ＜Wavelength for Switching Test＞ conductive grease of λ=0.9W/(m・K). (*6) SiC devices have lower short cuicuit withstand capability due to high current density. Please be advised to pay careful attention to short cuicuit accident and try to adjust protection time to shutdown them as short as possible. (*7) If the Product is used beyond absolute maximum ratings defined in the Specifications, as its internal structure may be dameged, please replace such Product with a new one. Eon=Id×Vds
Eoff=Id×Vds
trr
Vsurge
VDS
90%
ID
2%
90%
10%
10%
2%
2%
10%
2%
90%
VGS
10%
td(on)
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tr
td(off)
tf
2018.02 - Rev.E
Datasheet
BSM120D12P2C005 Electrical characteristic curves (Typical)
Fig.2 Drain-Source Voltage vs. Drain Current
Fig.1 Typical Output Characteristics 240
8 Tj=25ºC
Drain Current : ID [A]
Drain-Source Voltage : VDS [V]
VGS =18V
180
VGS =18V
7
VGS =16V
VGS =20V
VGS =14V
120 VGS =12V 60 VGS =10V 0
6 Tj=125ºC 5
Tj=150ºC
4 3 Tj=25ºC
2
1 0
0
2
4
6
8
0
40
Drain-Source Voltage : VDS [V]
120
160
200
240
Drain Current : ID [A]
Fig.4 Ron vs Junction Temperature
Fig.3 Drain-Source Voltage vs. Gate-Source Voltage 10
0.05 Tj=25ºC
9 8
VGS=12V VGS=14V
0.04
7 6
VGS=16V
0.03
Ron []
Drain-Source Voltage : VDS [V]
80
5 4
ID=180A
3
ID=120A
2
VGS=20V 0.02
0.01
ID=80A
1
VGS=18V
ID=40A
0
ID =120A
0 10
15
20
25
0
Gate-Source Voltage : VGS [V]
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50
100
150
200
250
Junction Temperature : Tj [ºC]
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Datasheet
BSM120D12P2C005 Electrical characteristic curves (Typical)
Fig.6 Forward characteristic of Diode
Fig.5 Forward characteristic of Diode 1000 Tj=150ºC
100
Source Current : Is [A]
Tj=25ºC
Source Current : Is [A]
Tj=25ºC
Tj=125ºC
Tj=150ºC Tj=125ºC Tj=25ºC
10
200
Tj=150ºC
150
Tj=125ºC
Tj=125ºC
100
50
VGS =0V VGS =18V
Tj=25ºC
VGS =0V VGS =18V
0
1 0
1
2
3
0
4
1
2
3
4
Source-Drain Voltage : VSD [V]
Source-Drain Voltage : VSD [V]
Fig.7 Drain Current vs. Gate-Source Voltage
Fig.8 Drain Current vs. Gate-Source Voltage 1.E+03
240 VDS =20V
VDS =20V
1.E+02
Drain Current : ID [A]
200
Drain Current : ID [A]
Tj=150ºC
160 Tj=150ºC 120 Tj=125ºC 80 40
Tj=25ºC
Tj=150ºC
1.E+01
Tj=125ºC
1.E+00
Tj=25ºC
1.E-01 1.E-02 1.E-03 1.E-04
0 0
5
10
0
15
Gate-Source Voltage : VGS [V]
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5
10
15
Gate-Source Voltage : VGS [V]
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Datasheet
BSM120D12P2C005 Electrical characteristic curves (Typical)
Fig.10 Switching Characteristics [ Tj=125ºC ]
Fig.9 Switching Characteristics [ Tj=25ºC ] 1000
1000 td(off)
tf
100
tr
td(on) 10
VDS =600V VGS(on) =18V VGS(off) =0V RG =3.9 Inductive Load
Switching Time : t [ns]
Switching Time : t [ns]
td(off)
1
tf
100
td(on) 10
VDS =600V VGS(on) =18V VGS(off) =0V RG =3.9 Inductive Load
1 0
100
200
300
0
Drain Current : ID [A]
100
200
300
Drain Current : ID [A]
Fig.12 Switching Loss vs. Drain Current [ Tj=125ºC ]
Fig.11 Switching Loss vs. Drain Current [ Tj=25ºC ] 9
7
7 6
VDS =600V VGS(on) =18V VGS(off) =0V RG =3.9 Inductive Load
6 Eon
Switching Loss [mJ]
VDS =600V VGS(on) =18V VGS(off) =0V RG =3.9 Inductive Load
8
Switching Loss [mJ]
tr
5 4
Eoff
3 2
5
Eon
Eoff
4 3 2 1
1
Err
Err 0
0 0
100
200
0
300
Drain Current : ID [A]
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100
200
300
Drain Current : ID [A]
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Datasheet
BSM120D12P2C005 Electrical characteristic curves (Typical)
Fig.13 Recovery Characteristics vs. Drain Current [ Tj=25ºC ] 100
Fig.14 Recovery Characteristics vs. Drain Current [ Tj=125ºC ] 100
100
Irr
10
10
VDS =600V VGS(on) =18V VGS(off) =0V RG =3.9 Inductive Load 1 100
200
VDS =600V VGS(on) =18V VGS(off) =0V RG =3.9 Inductive Load 1 0
300
100
Drain Current : ID [A]
200
300
Drain Current : ID [A]
Fig.15 Switching Characteristics vs. Gate Resistance [ Tj=25ºC ]
Fig.16 Switching Characteristics vs. Gate Resistance [ Tj=125ºC ]
10000
10000 VDS =600V ID =120A VGS(on) =18V VGS(off) =0V Inductive Load
1000
td(off)
Switching Time : t [ns]
Switching Time : t [ns]
10
1
1 0
Irr
10
Recovery Current : Irr [A]
trr
Recovery Current : Irr [A] Recovery Time : trr [ns]
Recovery Time : trr [ns]
trr
100
tr 100
td(on) tf
10
VDS =600V ID =120A VGS(on) =18V VGS(off) =0V Inductive Load
1000
td(off)
tf
100
tr td(on)
10 1
10
100
1
Gate Resistance : RG []
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10
100
Gate Resistance : RG []
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2018.02 - Rev.E
Datasheet
BSM120D12P2C005 Electrical characteristic curves (Typical)
Fig.17 Switching Loss vs. Gate Resistance [ Tj=25ºC ]
Fig.18 Switching Loss vs. Gate Resistance [ Tj=125ºC ]
20
20 VDS =600V ID =120A VGS(on) =18V VGS(off) =0V Inductive Load
Switching Loss [mJ]
16 14
16
12 10
VDS =600V ID =120A VGS(on) =18V VGS(off) =0V Inductive Load
18
Switching Loss [mJ]
18
Eon
8 Eoff
6 4 2
14 12 10
Eon
6 4 2
Err
0
Err
0 1
10
100
1
Gate Resistance : RG []
10
100
Gate Resistance : RG []
Fig.20 Gate Charge Characteristics [ Tj=25ºC ]
Fig.19 Typical Capacitance vs. Drain-Source Voltage
25
Ciss 1.E-08 Coss 1.E-09
Crss
1.E-10 Tj=25ºC VGS =0V 1MHz 1.E-11 0.01
Gate-Source Voltage : VGS [V]
1.E-07
Capasitance : C [nF]
Eoff
8
ID =120A Tj=25ºC VDS =600V
20
15
10
5
0 1
0
100
400
600
800
Total Gate charge : Qg [nC]
Drain-Source Voltage : VDS [V]
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200
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2018.02 - Rev.E
Datasheet
BSM120D12P2C005 Electrical characteristic curves (Typical)
Normalized Transient Thermal Impedance : Zth
Fig.21 Normalized Transient Thermal Impedance 1 Single Pulse Tc=25ºC
Per unit base DMOS part : 0.16K/W SBD part : 0.21K/W 0.1 0.001
0.01
0.1
1
10
Time [s]
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2018.02 - Rev.E
Notice
Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.
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R1107 S
