Thickness, Refractive Index and Stress Metrology System FILMS CONTROL
Aleris 8350 TM
The Aleris 8350 is the best of breed product wafer films metrology tool
BENEFITS
to meet tighter process tolerances for thickness, refractive index (RI), and stress measurements. The 8350 covers the broadest range of applications, including diffusion, CVD, etch and others.
Delivers up to 2x better thickness precision and 4x better RI matching than its predecessor due to enhanced optical sensitivity and stability
APPLICATIONS
Modular design and common • Thin film t-n-k measurements on smaller scribelines
light path allows for complete
• Ultra-thin gate oxide, 193nm ARC
flexibility in tool configuration
• Ultra-thin multi-layer stacks, including NO
per process module and easy
• Stress measurements of FEOL low deflection, high stress films (eg. Si Nitride capping) and parasitic BEOL films (E.g., low-K, ULK)
extendibility to meet a fab’s future needs Higher sensitivity and spatial
PRODUCT DESCRIPTION
resolution 2D local stress mapping
Enabling Measurement for Tighter Tolerances and Smaller Scribelines
Tighter ultra violet reflectivity
In addition to meeting tighter process tolerances, the BBSE also has a 20% smaller box size allowing measurement in smaller scribelines.
repeatability (10x)
Control for Critical Applications Ultra-thin gate-oxide thickness control uses the (SWE) option, an ultra stable, self-compensating ellipsometer, along with the Q-time control solution to provide excellent tool-to-tool matching, accuracy, stability, and reliability. Critical lithography measurements of photoresist and 190 ARC (thickness and RI) for advanced resist development, layer characterization, and process control are determined using 190nm BBSE technology. Measurement of ultra-thin ON and NO stacks is enabled due to higher 240nm BBSE sensitivity to thickness change which results in excellent matching and stability.
Enhanced throughput and reliability over previous generations
Aleris 8350 TM
PRODUCT DESCRIPTION (continued) Industry-Leading Throughput With increased sampling rates require for 45nm devices, high measurement throughput is essential to maximize productivity. Significant increases in throughput are provided for the BBSE and Reflectometer compared to the previous generation. This is due to the new optics that provide higher photon flux across the spectrum which leads to higher optical throughput and improved signal to noise ratio. StressMapperTM Provides Advanced Stress Capability StressMapper’s laser based tilt measurement provides higher sensitivity and spatial resolution allowing true 2D local stress mapping. Improved repeatability, matching and high throughput allows production monitoring of both global and 2D stress measurements on product wafers that have complicated film stacks, discontinuous films or pattern induced stress.
SWE
iDesorber
AMC Control solution for thin gate oxides
SiO2 SiC Low K SiC Low K SiC Low K SiN CoSi / NiSi
Without iDesorber s -EAN ! s 2ANGE ! s 3TD !
With iDesorber s -EAN ! s 2ANGE ! s 3TD !
Airborne molecular contamination (AMC) control solution for thin gate oxides.
Aleris’ robust multi-layer capability reduces number of measurement steps allowing for higher sampling.
KLA-TENCOR SERVICE/SUPPORT Customer service is an integral part of KLA-Tencor’s portfolio that enables our customers to accelerate yield. Our vast customer service organization with worldwide customers to achieve the required productivity and performance at the lowest overall cost. K-T Services includes comprehensive contracts, time and materials, spares, asset management, customer training, and yield consulting.
© 2008 KLA-Tencor Corporation. All brands or product names may be trademarks of their respective companies. KLA-Tencor reserves the right to change the hardware and/or software specifications without notice.
Printed in the USA PO-Aleris8350-01/08
KLA-Tencor Corporation 160 Rio Robles San Jose, CA 95134 phone 408.875.3000 fax 408.875.4144 www.kla-tencor.com
