SiC Power Module Datasheet
BSM400D12P2G003
Application
Circuit diagram
Motor drive
1
7
Inverter, Converter Photovoltaics, wind power generation. 9 8
Induction heating equipment.
3,4
Features
6 5
1) Low surge, low switching loss.
2
2) High-speed switching possible.
10
3) Reduced temperature dependence.
11
NTC
Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
Dimensions & Pin layout (Unit : mm)
D1
7
SS1 G1
8
TH1 TH2
9
10
4
11
1
3
2 6
5 G2 SS2
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13.Feb.2018 - Rev.001
Datasheet
BSM400D12P2G003
Absolute maximum ratings (Tj = 25°C) Parameter
Symbol
Conditions
Ratings
Drain - Source Voltage
VDSS
G-S short
1200
Gate - Source Voltage (+)
VGSS
D-S short
22
Gate - Source Voltage (-)
VGSS
D-S short
-6
VGSSsurge
D-S short
-10 to 26
ID
DC(Tc=60°C) VGS=18V
397
ID
DC(Tc=59℃) VGS=18V
400
G - S Voltage (tsurge<300nsec) Drain Current Note 1)
IDRM
Source Current Note 1)
Total Power Dissipation Note 3) Max Junction Temperature
V
Pulse (Tc = 60°C） 1ms VGS=18V
Note 2)
800
IS
DC(Tc=60°C) VGS=18V
418
IS
DC(Tc=60°C) VGS=0V
418
ISRM
Pulse (Tc = 60°C） 1ms VGS=18V
ISRM
Pulse (Tc = 60°C） 1ms VGS=0V
Note 2) Note 2)
Tc = 25°C
Ptot
800 2450 175
Junction Temperature
Tjop
-40 to 150
Storage Temperature
Tstg
-40 to 125
Isolation Voltage
Visol
Mounting Torque
-
Note 3)
A
800
Tjmax
Note 1) Note 2)
Unit
Terminals to baseplate f = 60Hz AC 1 min.
2500
Main Terminals : M6 screw
4.5
Mounting to heat sink M5 screw
3.5
W
°C
Vrms N ・m
Case temperature (Tc) is defined on the surface of base plate just under the chips. Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. Tj is less than 175°C.
Example of acceptable VGS waveform +26V +22V
0V
-6V -10V
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Datasheet
BSM400D12P2G003 Electrical characteristics (Tj=25°C) Parameter
Symbol
On-state static Drain-Source Voltage
VDS(on)
Drain Cutoff Current
IDSS
Ratings Min. Typ. Max.
Conditions
－ － －
2.3 3.3 3.8
3.2 － 4.6
V
－
－
4
mA
－ － － － － －
1.8 2.3 2.4 1.4 1.7 1.8
2.1 － 3.4 － － －
V
VDS=10V,ID=85mA
1.6
－
4
V
VGS=22V,VDS=0V
－ -0.5 － － － － － － － － － － － － － － － －
－ － 60 50 70 240 75 38 1.4 5.0 3370 10.0 16.7 16.7 12.0 11.0 － －
0.5 － － － － － － － － － － － － － － － 61 80
－
15
－
Tj=25°C Tj=125°C Tj=150°C
ID=400A,VGS=18V
VDS=1200V,VGS=0V
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
VGS=0V,IS=400A
Souce-Drain Voltage
VSD VGS=18V,IS=400A
Gate-Source Threshold Voltage Gate-Source Leak Current
VGS(th) IGSS
NTC B Value Stray Inductance
td(on) tr trr td (off) tf Ciss RGint R25 B50/25 Ls
Creepage Distance
-
Switching Characteristics Input Capacitance Gate Registance NTC Rated Resistance
Clearance Distance Junction-to -Case Thermal Resistance Case-to -heat sink Thermal Resistance
Note 4) Note 5)
VGS=-6V,VDS=0V
VGS(on)=18V、VGS(off)=0V VDS=600V ID=400A RG(on)=0.2 ohm, RG(off)=0.2 ohm Inductive load VDS=10V,VGS=0V,200kHz Tj=25°C
Terminal to heat sink Terminal to terminal Terminal to heat sink
-
Terminal to terminal DMOSFET（1/2 module） Note 4)
Rth(j-c) Rth(c-f)
SBD（1/2 module） Note 4) Case to heat sink, per 1 module. Thermal grease applied. Note 5）
Measurement of Tc is to be done at the point just under the chip. Typical value is measured by using thermally conductive grease of λ=0.9W/(m・K). If the Product is used beyond absolute maximum ratings defined in the Specifications, as its internal structure may be dameged, please replace such Product with a new one.
µA
ns
nF Ω kΩ K nH mm mm mm mm
°C/kW
＜Wavelength for Switching Test＞ Eon=Id×Vds
Eoff=Id×Vds
trr Vsurge VDS 90%
Note 6)
Unit
ID
2%
90%
10%
10%
2%
2%
10%
2%
90% VGS
10%
td(on)
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tr
td(off)
tf
13.Feb.2018 - Rev.001
Datasheet
BSM400D12P2G003
Electrical characteristic curves (Typical)
Fig.2 Drain source voltage characteristic (TYP)
Fig.1 Output characteristic 25°C (TYP) 800
6
VGS=16V Drain source voltage VDS (V)
700
Drain current ID (A)
VGS=18V 600
VGS=20V
500
VGS=14V
400 300
VGS=12V
200
VGS=10V
100 0
Tj=150℃
5
VGS=18V 4
Tj=125℃
2 1 0
0
2
4
6
0
8
100 200 300 400 500 600 700 800
Drain source voltage VDS (V)
Drain current ID (A)
Fig.3 Drain source voltage characteristic 25°C (TYP)
Fig.4 Ron vs Tj characteristic (TYP)
5
16 14
4
VGS=12V VGS=14V
12 3
VGS=16V
Tj=25℃
Ron (mΩ)
Drain source voltage VDS (V)
Tj=25℃
3
ID=400A
2
ID=300A
10
VGS=18V VGS=20V
8 6
ID=400A
ID=200A
1
4
ID=100A 2
0 12
14
16
18
20
22
0
24
Gate source voltage VGS (V)
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50
100
150
200
250
Junction temperature Tj (°C)
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Datasheet
BSM400D12P2G003
Electrical characteristic curves (Typical)
Fig.5 Forward characteristic of Diode (TYP)
Fig.6 Forward characteristic of Diode (TYP)
1000
800
Tj=25℃
VGS=18V
Source current IS (A)
Source current IS (A)
700
Tj=150℃ Tj=125℃ 100
VGS=0V Tj=25℃
600
VGS=18V
500 400
Tj=150℃
300
Tj=125℃
200
VGS=0V
100
10
0
0
1
2
3
4
0
Source drain voltage VSD (V)
2
3
4
5
Source drain voltage VSD (V)
Fig.7 Drain Current vs Gate Voltage (TYP)
Fig.8 Drain Current vs Gate Voltage (TYP) 1.0E+03
800 700
VDS=20V Tj=125℃
400 300
Tj=25℃
200
Drain Current ID (A)
600 500
Tj=150℃
1.0E+02
Tj=150℃ Drain Current ID (A)
1
100
1.0E+01
Tj=125℃
1.0E+00
Tj=25℃
1.0E-01
VDS=20V
1.0E-02 1.0E-03
0 0
5
10
1.0E-04
15
0
Gate Source Voltage VGS (V)
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5
10
Gate Source Voltage VGS (V)
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13.Feb.2018 - Rev.001
Datasheet
BSM400D12P2G003
Electrical characteristic curves (Typical)
Fig.9 Switching time vs drain current at 25°C (TYP)
Fig.10 Switching time vs drain current at 125°C (TYP) 1000
1000
td(off) Switching time (ns)
Switching time (ns)
td(off) tr td(on)
100
tf VDS=600V RG(on)=0.2Ω VGS(on)=18V RG(off)=0.2Ω VGS(off)=0V INDUCTIVE LOAD
10
1
tf
100
tr td(on)
10 VDS=600V VGS(on)=18V VGS(off)=0V
1 0
200
400
600
800
1000
0
Drain current ID (A)
200
400
600
800
1000
Drain current ID (A)
Fig.11 Switching time vs drain current at 150°C (TYP)
Fig.12 Switching loss vs drain current at 25°C (TYP) 40
1000
VDS=600V VGS(on)=18V VGS(off)=0V
35
Switching loss (mJ)
td(off) Switching time (ns)
RG(on)=0.2Ω RG(off)=0.2Ω INDUCTIVE LOAD
tf tr
100
td(on) VDS=600V VGS(on)=18V VGS(off)=0V
10
RG(on)=0.2Ω RG(off)=0.2Ω INDUCTIVE LOAD
30
Eon
RG(on)=0.2Ω RG(off)=0.2Ω INDUCTIVE LOAD
25
Eoff
20 15 10 5
Err
0
1 0
200
400
600
800
0
1000
Drain current ID (A)
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200
400
600
800
1000
Drain current ID (A)
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Datasheet
BSM400D12P2G003
Electrical characteristic curves (Typical)
Fig.13 Switching loss vs drain current at 125°C (TYP)
Fig.14 Switching loss vs drain current at 150°C (TYP) 40
40 VDS=600V VGS(on)=18V VGS(off)=0V
30
Eon
RG(on)=0.2Ω RG(off)=0.2Ω
25
VDS=600V VGS(on)=18V VGS(off)=0V
35
INDUCTIVE LOAD
Switching loss (mJ)
Eoff
20 15 10 5
30
Eon
RG(on)=0.2Ω RG(off)=0.2Ω
25
Eoff
INDUCTIVE LOAD
20 15 10
Err
5
Err
0
0 0
200
400
600
800
1000
0
Drain current ID (A)
200
400
600
100
Fig.16 Recovery characteristic vs drain current at 125°C (TYP) 100
1000
1000 trr
100
VDS=600V VGS(on)=18V VGS(off)=0V RG=0.2Ω INDUCTIVE LOAD
1 400
600
10
100 VDS=600V VGS(on)=18V VGS(off)=0V RG=0.2Ω INDUCTIVE LOAD
10 0
800
Drain current ID (A)
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Irr
1
10 200
Recovery time trr (ns)
Irr
Recovery current Irr(A)
Recovery time trr (ns)
trr
0
1000
Drain current ID (A)
Fig.15 Recovery characteristic vs drain current at 25°C (TYP)
10
800
Recovery current Irr(A)
Switching loss (mJ)
35
200
400
600
800
Drain current ID (A)
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Datasheet
BSM400D12P2G003
Electrical characteristic curves (Typical)
Fig.18 Switching time vs gate resistance at 25°C (TYP)
Fig.17 Recovery characteristic vs drain current at 150°C (TYP) 100
10000
1000
VDS=600V ID=400A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD
10
100 VDS=600V VGS(on)=18V VGS(off)=0V RG=0.2Ω INDUCTIVE LOAD
Switching time (ns)
Irr
Recovery current Irr(A)
Recovery time trr (ns)
trr
1000
td(off) tf
100 td(on) tr
1
10
10 0
200
400
600
0.1
800
1
Drain current ID (A)
Gate resistance RG (Ω)
Fig.19 Switching time vs gate resistance at 125°C (TYP)
Fig.20 Switching time vs gate resistance at 150°C (TYP) 10000
10000 VDS=600V ID=400A VGS(on)=18V VGS(off)=0V
INDUCTIVE LOAD
1000
VDS=600V ID=400A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD
td(off) Switching time (ns)
Switching time (ns)
10
1000
tf
100
tf
100
td(on)
td(on)
tr
tr 10
td(off)
10 0.1
1
10
0.1
Gate resistance RG (Ω)
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1
10
Gate resistance RG (Ω)
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Datasheet
BSM400D12P2G003
Electrical characteristic curves (Typical)
Fig.21 Switching loss vs gate resistance at 25°C (TYP)
Fig.22 Switching loss vs gate resistance at 125°C (TYP)
100
100
Switching loss (mJ)
60
Eon
40 Eoff
20
VDS=600V ID=400A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD
80 Switching loss (mJ)
VDS=600V ID=400A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD
80
60
Eon
40
Eoff
20 Err
Err 0
0 0.1
1
0.1
10
Gate resistance RG (Ω)
1
10
Gate resistance RG (Ω)
Fig.23 Switching loss vs gate resistance at 150°C (TYP) 100 VDS=600V ID=400A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD
Switching loss (mJ)
80
Eon
60
40 Eoff
20
Err 0 0.1
1
10
Gate resistance RG (Ω)
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Datasheet
BSM400D12P2G003
Electrical characteristic curves (Typical)
Fig.24 Capacitance vs Drain source voltage (TYP)
Fig.25 Gate charge characteristic (TYP) 25 Gate source voltage VGS(V)
1.E-07
Capacitance(F)
Ciss 1.E-08
1.E-09
Tj=25℃ VGS=0V 200kHz
Coss
20
15
10
ID=400A VDS=600V Tj=25℃
5
Crss 1.E-10 0.01
0 0.1
1
10
100
1000
0
Drain source voltage VDS (V)
500
1000
1500
2000
2500
Gate charge QG (nC)
Fig.26 Transient thermal impedance (TYP)
Normalized transient thermal impedance
1
Single Pulse Tc=25℃
0.1
Per unit base DMOS part : 61℃/kW SBD part :80℃/kW
0.01 0.0001 0.001
0.01
0.1
1
10
Time (s)
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Notice
Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.
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R1102S
