Data Sheet
0.9V Drive Nch MOSFET RYU002N05 Structure Silicon N-channel MOSFET
Dimensions (Unit : mm)
Features 1) High speed switing. 2) Small package(UMT3). 3)Ultra low voltage drive(0.9V drive).
(2)
(1)
Abbreviated symbol : QJ
Application Switching
Packaging specifications
Inner circuit
Package Type Code Basic ordering unit (pieces) RYU002N05
(3)
Taping T306 3000
Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage
Source current (Body Diode)
Limits
Unit
VDSS
50
V
VGSS
8
V
Continuous
ID
200
mA
Pulsed Continuous
IDP IS
*1
800 150
mA mA
Pulsed
ISP
*1
800
mA
PD
*2
200
mW
Tch Tstg
150 55 to 150
C C
Symbol
Limits
Unit
Rth (ch-a)*
625
C / W
Gate-source voltage Drain current
(2)
Symbol
Power dissipation Channel temperature Range of storage temperature
(1)
(1) SOURCE (2) GATE (3) DRAIN
*1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.
Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a recommended land.
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2011.04 - Rev.A
Data Sheet
RYU002N05 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage
Symbol IGSS
Drain-source breakdown voltage V (BR)DSS
Min.
Typ.
Max.
Unit
-
-
10
A
VGS=8V, VDS=0V
50
-
-
V
ID=1mA, VGS=0V
Conditions
IDSS
-
-
1
A
VDS=50V, VGS=0V
VGS (th)
0.3
-
0.8
V
VDS=10V, ID=1mA
-
1.6
2.2
-
1.7
2.4
-
2.0
2.8
-
2.2
3.3
ID=100mA, VGS=1.2V
-
3.0
9.0
ID=10mA, VGS=0.9V
l Yfs l*
0.2
-
-
Input capacitance
Ciss
-
26
-
pF
VDS=10V
Output capacitance
Coss
-
6
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
3
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
5
-
ns
ID=100mA, VDD 25V
tr *
-
8
-
ns
VGS=4.5V
td(off) * tf *
-
17 43
-
ns ns
RL=250 RG=10
Zero gate voltage drain current Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Rise time Turn-off delay time Fall time
RDS (on)*
ID=200mA, VGS=4.5V ID=200mA, VGS=2.5V
S
ID=200mA, VGS=1.5V
ID=200mA, VDS=10V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage
Symbol VSD *
Min.
Typ.
Max.
-
-
1.2
Unit V
Conditions Is=200mA, VGS=0V
*Pulsed
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2/5
2011.04 - Rev.A
Data Sheet
RYU002N05 Electrical characteristics curves
0.2
0.1
VGS= 4.5V VGS= 2.5V VGS= 1.5V VGS= 1.2V
VGS= 0.9V
Ta=25C Pulsed
VGS= 0.8V
0.05
1 VGS= 4.5V VGS= 2.5V VGS= 1.5V VGS= 1.2V
0.15 VGS= 0.9V 0.1
0.2
0.4
0.6
VDS= 10V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= 25C
0.1
0.01
VGS= 0.7V 0.001
0 0
0.8
1
0
2
4
6
8
0
10
0.2
0.4
0.6
0.8
1
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.1 Typical Output Characteristics( Ⅰ)
Fig.2 Typical Output Characteristics( Ⅱ)
Fig.3 Typical Transfer Characteristics
Ta= 25C Pulsed
VGS= 0.9V VGS= 1.2V VGS= 1.5V VGS= 2.5V VGS= 4.5V
100 0.001
0.01
0.1
1
VGS= 4.5V Pulsed
1000 Ta= 125C Ta= 75C Ta= 25C Ta= 25C 100 0.001
DRAIN-CURRENT : ID[A]
VGS= 1.5V Pulsed
Ta= 125C Ta= 75C Ta= 25C Ta= 25C
100 0.01
0.1
VGS= 2.5V Pulsed
1000
Ta= 125C Ta= 75C Ta= 25C Ta= 25C
100
1
0.001
1
DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ)
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10000 VGS= 1.2V Pulsed
1000 Ta= 125C Ta= 75C Ta= 25C Ta= 25C 100 0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ)
3/5
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
10000
0.001
0.1
10000
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ)
1000
0.01
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
1000
10000
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
10000
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
Ta=25C Pulsed
VGS= 0.8V 0.05
VGS= 0.7V 0
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
DRAIN CURRENT : ID[A]
0.15
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
0.2
10000 VGS= 0.9V Pulsed
Ta= 125C Ta= 75C Ta= 25C Ta= 25C
1000
100 0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( Ⅵ)
2011.04 - Rev.A
1 Ta=25C Ta=25C Ta=75C Ta=125C 0.1
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
1 VDS= 10V Pulsed
SOURCE CURRENT : Is [A]
VGS=0V Pulsed
0.1 Ta= 125C Ta= 75C Ta= 25C Ta= 25C 0.01
0.01
0.1
1
0.5
1
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.10 Forward Transfer Admittance vs. Drain Current
Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : VGS [V]
tf
100
Ta=25C VDD=25V VGS=4.5V RG=10
10
td(on)
tr
1 0.1
1
5000 Ta=25C Pulsed
4000 ID= 0.01A
3000
ID= 0.20A 2000 1000 0
1.5
DRAIN-CURRENT : ID[A]
td(off)
0.01
0
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage
1000 Ta=25C f=1MHz VGS=0V
4 CAPACITANCE : C [pF]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
10
1000 SWITCHING TIME : t [ns]
Data Sheet
RYU002N05
3
2 Ta=25C VDD=25V ID= 0.2A RG=10 Pulsed
1
0 0
0.5
1
100
Ciss
10 Crss Coss 1
1.5
0.01
0.1
1
10
100
DRAIN-CURRENT : ID[A]
TOTAL GATE CHARGE : Qg [nC]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.13 Switching Characteristics
Fig.14 Typical Capacitance vs. Drain-Source Voltage
Fig.15 Typical Capacitance vs. Drain-Source Voltage
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2011.04 - Rev.A
Data Sheet
RYU002N05 Measurement circuits
Pulse width
VGS
ID
VDS RL
50%
10%
D.U.T. RG
90%
50% 10%
VGS VDS
VDD
90% td(on)
tr ton
Fig.1-1 Switching Time Measurement Circuit
10% 90% td(off)
tf toff
Fig.1-2 Switching Waveforms
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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2011.04 - Rev.A
Notice
Notes
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R1120A