SiC Power Module Datasheet
BSM300D12P2E001
Application
Circuit diagram
Motor drive
1
7
Inverter, Converter Photovoltaics, wind power generation.
9 8
3,4
Induction heating equipment. 6 5
Features
10
1) Low surge, low switching loss.
11
2 NTC
2) High-speed switching possible. 3) Reduced temperature dependence.
Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
Dimensions & Pin layout (Unit : mm)
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1/9
2018.02 - Rev.C
Datasheet
BSM300D12P2E001 Absolute maximum ratings (Tj = 25°C) Parameter Drain-source voltage
Conditions Symbol VDSS G-S short
Gate-source voltage() VGSS Gate-source voltage() G - S Voltage (tsurge<300nsec) VGSS_surge ID 1 Drain current * IDRM IS Source current *1 ISRM 3
Total power disspation * Max Junction Temperature Operating junction temperature Storage temperature
Ptot Tjmax Tjop Tstg
Isolation voltage
Visol
Limit 1200 22
D-S short D-S short DC (Tc=60°C) 2
Pulse (Tc=60°C) 1ms * DC (Tc=60°C )
2
Pulse (Tc=60°C) 1ms * Tc=25°C
Terminals to baseplate, f=60Hz AC 1min.
6 10 to 26 300 600 300 600 1875 175
Unit
V
A
W
40 to150 40 to125
°C
2500
Vrms
4.5 Main Terminals : M6 screw N·m 3.5 Mounting to heat shink : M5 screw (*1) Case temperature (Tc) is defined on the surface of base plate just under the chips. (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tj max. (*3) Tj is less than 175°C
Mounting torque
Example of acceptable VGS waveform
26V tsurge
22V
0V
tsurge
6V 10V
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2018.02 - Rev.C
Datasheet
BSM300D12P2E001 Electrical characteristics (Tj=25°C) Parameter Static drain-source on-state voltage
Symbol
Conditions
VDS(on) ID=300A, VGS=18V IDSS
Drain cutoff current
Tj=25°C Tj=125°C Tj=150°C
VDS=1200V, VGS=0V VGS=0V, IS=300A
VSD
Source-drain voltage
Min. － － － － －
VGS=18V, IS=300A
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
－ － － 1.6 － 0.5 － － － － － － -
Gate-source threshold voltage VGS(th) VDS=10V, ID=68mA VGS=22V, VDS=0V IGSS Gate-source leakage current VGS= 6V, VDS=0V td(on) VGS(on)=18V, VGS(off)=0V tr VDS=600V ID=300A trr Switching characteristics td(off) RG=0.2 inductive load tf Input capacitance Gate Registance NTC Rated Resistance NTC B Value Stray Inductance
Ciss RGint
Typ. 2.2 3.0 3.4 1.6 2.2 2.4 1.4 1.6 1.7 2.7 － － 80 70 50 250 65 32 1.6 5.0 3370 13 14.5 15.0 12.0 9.0 － －
VDS=10V, VGS=0V,100kHz Tj=25°C
R25 B50/25 Ls
Creepage Distance
-
Clearance Distance
-
Terminal to heat sink Terminal to terminal Terminal to heat sink Terminal to terminal
Max. 2.9 － 4.5 3.2 2.1 3.2 － － 4.0 0.5 － － － － － － － -
Unit V mA
V
V A
ns
nF k K nH mm mm mm mm
0.08 0.11
4 － DMOS (1/2 module) * 4 － SBD (1/2 module) * K/W Case to heat sink, per 1 module, Case-to-heat sink Rth(c-f) 0.035 Thermal resistance Thermal grease applied *5 (*4) Measurement of Tc is to be done at the point just under the chip. (*5) Typical value is measured by using thermally conductive grease of λ=0.9W/(m ・K). ＜Wavelength for Switching Test＞ (*6) If the Product is used beyond absolute maximum ratings defined in the Specifications, as its internal structure may be dameged, please replace such Product with a new one.
Junction-to-case thermal resistance
Rth(j-c)
Eon=Id×Vds
Eoff=Id×Vds
trr
Vsurge
VDS
90%
ID
2%
90%
10%
10%
2%
2%
10%
2%
90% VGS
10%
td(on)
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tr
td(off)
tf
2018.02 - Rev.C
Datasheet
BSM300D12P2E001 Electrical characteristic curves (Typical)
Fig.1 Typical Output Characteristics [ Tj=25ºC ]
8
600
VGS=18V
VGS=18V
7
VGS=16V
Drain-Source Voltage : VDS [V]
500
Drain Current : ID [A]
Fig.2 Drain-Source Voltage vs. Drain Current
VGS=20V
400
VGS=14V
300 VGS=12V
200 100
VGS=10V
6 Tj=150ºC
5 4
Tj=125ºC
3
Tj=25ºC
2
1 0
0 0
2
4
6
0
8
200
Drain-Source Voltage : VDS [V]
Tj=25ºC
Drain-Source Voltage : VDS [V]
6 5 4 ID=400A ID=300A
2
ID=200A ID=150A
1 0 12
14
16
18
20
22
24
26
Static Drain - Source On-State Resistance : RDS(on) [m]
Fig.4 Static Drain - Source On-State Resistance vs. Junction Temperature
8
3
30 ID=300A 25 20 VGS=12V
15 10
VGS=14V VGS=16V VGS=18V VGS=20V
5 0 0
50
100
150
200
250
Junction Temperature : Tj [ºC]
Gate-Source Voltage : VGS [V]
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600
Drain Current : ID [A]
Fig.3 Drain-Source Voltage vs. Gate-Source Voltage [ Tj=25ºC ] 7
400
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Datasheet
BSM300D12P2E001 Electrical characteristic curves (Typical)
Fig.5 Forward characteristic of Diode
Fig.6 Forward characteristic of Diode
1000
600
Tj=150ºC
Tj=125ºC
Tj=150ºC 500 Tj=150ºC
Source Current : Is [A]
Source Current : Is [A]
Tj=25ºC Tj=125ºC Tj=25ºC
100
VGS=0V VGS=18V 10
Tj=125ºC
400
Tj=150ºC
300
Tj=125ºC
Tj=25ºC
200
100
Tj=25ºC VGS=0V VGS=18V
0 0
1
2
3
0
4
1
2
3
4
Source-Drain Voltage : VSD [V]
Source-Drain Voltage : VSD [V]
Fig.8 Drain Current vs. Gate-Source Voltage
Fig.7 Drain Current vs. Gate-Source Voltage
1000
600 VDS=20V
VDS=20V Tj=125ºC
500 400
Drain Current : ID [A]
Drain Current : ID [A]
Tj=150ºC Tj=125ºC
300 Tj=25ºC 200
100
Tj=150ºC
Tj=25ºC
10
100 0
1 0
5
10
0
15
10
15
Gate-Source Voltage : VGS [V]
Gate-Source Voltage : VGS [V]
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5
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2018.02 - Rev.C
Datasheet
BSM300D12P2E001 Electrical characteristic curves (Typical)
Fig.9 Switching Characteristics [ Tj=25ºC ]
Fig.10 Switching Characteristics [ Tj=150ºC ]
1000
1000
td(off)
Switching Time : t [ns]
Switching Time : t [ns]
td(off) tr 100 tf
td(on) VDS=600V VGS(on)=18V VGS(off)= 0V
RG=0.2 INDUCTIVE LOAD
100
td(on) VDS=600V VGS(on)=18V VGS(off)= 0V
10
10 0
200
400
tr
tf
0
600
200
Drain Current : ID [A]
400
600
Drain Current : ID [A]
Fig.11 Switching Loss vs. Drain Current [ Tj=25ºC ]
Fig.12 Switching Loss vs. Drain Current [ Tj=150ºC ]
25
20 VDS=600V VGS(on)=18V VGS(off)=0V RG=0.2 INDUCTIVE LOAD
15
VDS=600V VGS(on)=18V VGS(off)=0V RG=0.2 INDUCTIVE LOAD
20 Eon
Switching Loss [mJ]
Switching Loss [mJ]
RG=0.2 INDUCTIVE LOAD
10 Eoff 5
15
Eoff
Eon
10
5 Err
Err
0
0 0
200
400
0
600
Drain Current : ID [A]
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200
400
600
Drain Current : ID [A]
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2018.02 - Rev.C
Datasheet
BSM300D12P2E001 Electrical characteristic curves (Typical)
100
0.1 100
trr VDS=600V VGS(on)=18V VGS(off)=0V RG=0.2 INDUCTIVE LOAD
10 0.01
1 0
200
Irr 100
0 100 trr VDS=600V VGS(on)=18V VGS(off)=0V RG=0.2 INDUCTIVE LOAD
10
0
Drain Current : ID [A]
Switching Time : t [ns]
Recovery Current : Irr [A]
10000 VDS=600V ID=300A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD
td(off)
tf
10 600
400
Fig.16 Switching Characteristics vs. Gate Resistance [ Tj=150ºC ]
10000
1000
200
Drain Current : ID [A]
Fig.15 Switching Characteristics vs. Gate Resistance [ Tj=25ºC ] VDS=600V ID=300A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD
0 10
1
10.001 600
400
1 1000
Recovery Current : Irr [A]
Irr
10
1000
1 1000
Recovery Current : Irr [A]
Recovery Time : trr [ns]
1000
Fig.14 Recovery Characteristics vs. Drain Current [ Tj=150ºC ]
Recovery Time : trr [ns]
Fig.13 Recovery Characteristics vs. Drain Current [ Tj=25ºC ]
tr td(on)
100
10
1000
td(off)
tf tr td(on)
100
10 0.1
1
10
100
0.1
Gate Resistance : RG []
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1
10
100
Gate Resistance : RG []
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2018.02 - Rev.C
Datasheet
BSM300D12P2E001 Electrical characteristic curves (Typical)
Fig.18 Switching Loss vs. Gate Resistance [ Tj=150ºC ]
Fig.17 Switching Loss vs. Gate Resistance [ Tj=25ºC ] 60
60 VDS=600V ID=300A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD
40
Eoff
30 20 10 Err
0 0.1
1
VDS=600V ID=300A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD
50
Switching Loss [mJ]
Switching Loss [mJ]
50
Eon
40 30
Eoff
20
Eon 10 Err
0
10
100
0.1
Fig.19 Typical Capacitance vs. Drain-Source Voltage
100
Fig.20 Gate Charge Characteristics [ Tj=25ºC ]
1.E-07
1.E-08
Coss
1.E-09
Tj=25ºC VGS=0V 0.1
Crss 1
10
100
Gate-Source Voltage : VGS [V]
25
Ciss
Capasitance : C [F]
10
Gate Resistance : RG []
Gate Resistance : RG []
1.E-10 0.01
1
15
10
5 ID=300A Tj=25ºC 0
1000
0
Drain-Source Voltage : VDS [V]
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20
500
1000
1500
2000
Total Gate charge : Qg [nC]
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2018.02 - Rev.C
Datasheet
BSM300D12P2E001 Electrical characteristic curves (Typical)
Normalized Transient Thermal Impedance : Zth
Fig.21 Normalized Transient Thermal Impedance 1
0.1 Single Pulse TC=25ºC Per unit base DMOS part : 0.08K/W SBD part : 0.11K/W 0.01 0.001
0.01
0.1
1
10
Time [s]
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2018.02 - Rev.C
Notice
Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.
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R1107 S
