SiC Power Module Datasheet
BSM180D12P2E002 Application
Circuit diagram
Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment.
Features 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence.
Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
Dimensions & Pin layout (Unit : mm)
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
1/10
2018.02 - Rev.C
Datasheet
BSM180D12P2E002 Absolute maximum ratings (Tj = 25°C) Conditions Symbol VDSS G-S short
Parameter Drain-source voltage
Gate-source voltage() VGSS Gate-source voltage() G - S Voltage (tsurge<300nsec) VGSS_surge ID 1 IDRM Drain current * IDRM IS 1 ISRM Source current * ISRM 3
Total power disspation * Max Junction Temperature Operating junction temperature Storage temperature
Ptot Tjmax Tjop Tstg
Isolation voltage
Visol
Limit 1200 22
D-S short D-S short DC (Tc=60°C) 2
Pulse (Tc=60°C) 1ms * 2 Pulse (Tc=60°C) 10us * DC (Tc=60°C ) VGS=18V Pulse (Tc=60°C) 1ms VGS=18V *
2
Pulse (Tc=60°C) 10us VGS=18V *2
Tc=25°C
Terminals to baseplate, f=60Hz AC 1min.
6 10 to 26 204 360 540 204 360 540 1360 175
Unit
V
A
W
40 to150 40 to125
°C
2500
Vrms
4.5 Main Terminals : M6 screw N·m 3.5 Mounting to heat shink : M5 screw (*1) Case temperature (Tc) is defined on the surface of base plate just under the chips. (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tj max. (*3) Tj is less than 175°C
Mounting torque
Example of acceptable VGS waveform 26V tsurge
22V
0V
tsurge
6V 10V
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
2/10
2018.02 - Rev.C
Datasheet
BSM180D12P2E002 Electrical characteristics (Tj=25°C) Parameter
Symbol
Static drain-source on-state voltage
Conditions
VDS(on) ID180A, VGS=18V IDSS
Drain cutoff current
Tj=25°C Tj=125°C Tj=150°C
VDS=1200V, VGS=0V VGS=0V, IS=180A
VSD
Source-drain voltage
Min. - - - - -
VGS=18V, IS=180A
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
- - - 1.6 - 0.5 - - - - - - -
Gate-source threshold voltage VGS(th) VDS=10V, ID=35.2mA VGS=22V, VDS=0V IGSS Gate-source leakage current VGS= 6V, VDS=0V td(on) VGS(on)=18V, VGS(off)=0V tr VDS=600V ID=180A trr Switching characteristics td(off) RG(on)=1.0, RG=0.2 inductive load tf Input capacitance Gate Registance NTC Rated Resistance NTC B Value Stray Inductance
Ciss RGint
Typ. 2.2 3.1 3.5 1.6 2 2.2 1.3 1.5 1.6 - - 45 45 45 125 45 18 1.2 5.0 3370 13.0 14.5 15.0 12.0 9.0 - -
VDS=10V, VGS=0V, 200kHz Tj=25°C
R25 B50/25 Ls
Creepage Distance
-
Clearance Distance
-
Terminal to heat sink Terminal to terminal Terminal to heat sink Terminal to terminal
Max. 3.2 - 5.0 3.2 2.2 3.3 - - 4 0.5 - - - - - - - -
Unit V mA
V
V A
ns
nF k K nH mm mm mm mm
0.11 0.14
4 - DMOS (1/2 module) * 4 - SBD (1/2 module) * °C/W Case to heat sink, per 1 module, Case-to-heat sink Rth(c-f) 0.035 Thermal resistance Thermal grease applied *5 (*4) Measurement of Tc is to be done at the point just under the chip. (*5) Typical value is measured by using thermally conductive grease of λ=0.9W/(m・K). <Wavelength for Switching Test> (*6) If the Product is used beyond absolute maximum ratings defined in the Specifications, as its internal structure may be dameged, please replace such Product with a new one.
Junction-to-case thermal resistance
Rth(j-c)
Eon=Id×Vds
Eoff=Id×Vds
trr
Vsurge
VDS
90%
ID
2%
90%
10%
10%
2%
2%
10%
2%
90% VGS
10%
td(on)
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
3/10
tr
td(off)
tf
2018.02 - Rev.C
Datasheet
BSM180D12P2E002 Electrical characteristic curves (Typical)
Fig.1 Typical Output Characteristics [ Tj=25ºC ] 360
8
VGS =16V
300
VGS =18V VGS =20V
240
VGS =18V
7
Drain-Source Voltage : VDS [V]
Drain Current : ID [A]
Fig.2 Drain-Source Voltage vs. Drain Current
VGS =14V
180 120
VGS =12V
60 VGS =10V 0
6
Tj=125ºC
5
Tj=150ºC
4 3
Tj=25ºC
2 1 0
0
2
4
6
8
0
60
Drain-Source Voltage : VDS [V]
4
ID=180A ID=120A ID=90A
ID=60A
0 12
14
16
18
20
22
24
Static Drain - Source On-State Resistance : RDS(on) [m]
Drain-Source Voltage : VDS [V]
Tj=25ºC
1
300
360
40 35 VGS=12V
30
VGS=14V
25 20
VGS=16V
15
VGS=18V VGS=20V
10 5 ID =180A
0 0
50
100
150
200
250
Junction Temperature : Tj [ºC]
Gate-Source Voltage : VGS [V]
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
240
Fig.4 Static Drain - Source On-State Resistance vs. Junction Temperature
5
2
180
Drain Current : ID [A]
Fig.3 Drain-Source Voltage vs. Gate-Source Voltage [ Tj=25ºC ]
3
120
4/10
2018.02 - Rev.C
Datasheet
BSM180D12P2E002 Electrical characteristic curves (Typical)
Fig.5 Forward characteristic of Diode
Fig.6 Forward characteristic of Diode
1000
360 Tj=150ºC
Tj=25ºC
Tj=25ºC
Source Current : Is [A]
Source Current : Is [A]
Tj=150ºC
300
Tj=125ºC Tj=150ºC
100
Tj=125ºC Tj=25ºC 10
VGS =0V VGS =18V
240 180
Tj=125ºC
120
60 Tj=25ºC
VGS =0V VGS =18V
0
1 0
1
2
3
0
4
1
2
3
4
Source-Drain Voltage : VSD [V]
Source-Drain Voltage : VSD [V]
Fig.8 Drain Current vs. Gate-Source Voltage
Fig.7 Drain Current vs. Gate-Source Voltage
1.E+03
360 VDS =20V
Drain Current : ID [A]
240 Tj=150ºC
180
Tj=125ºC
120
VDS =20V
1.E+02
300
Drain Current : ID [A]
Tj=150ºC
Tj=125ºC
60
Tj=150ºC
1.E+01
Tj=125ºC
1.E+00
Tj=25ºC
1.E-01 1.E-02 1.E-03
Tj=25ºC
1.E-04
0 0
5
10
0
15
10
15
Gate-Source Voltage : VGS [V]
Gate-Source Voltage : VGS [V]
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
5
5/10
2018.02 - Rev.C
Datasheet
BSM180D12P2E002 Electrical characteristic curves (Typical)
Fig.9 Switching Characteristics [ Tj=25ºC ]
Fig.10 Switching Characteristics [ Tj=125ºC ]
1000
1000
td(off)
100
tf
Switching Time : t [ns]
Switching Time : t [ns]
td(off) tr td(on) VDS =600V VGS(on) =18V VGS(off) =0V RG(on) 1.0 RG(off) =0.2 Inductive Load
10
1
100
tf
tr
td(on) VDS =600V VGS(on) =18V VGS(off) =0V RG(on) 1.0 RG(off) =0.2 Inductive Load
10
1 0
100
200
300
400
0
100
Drain Current : ID [A]
300
400
Drain Current : ID [A]
Fig.11 Switching Characteristics [ Tj=150ºC ]
Fig.12 Switching Loss vs. Drain Current [ Tj=25ºC ]
1000
20
td(off) 100
tr
tf
td(on) VDS =600V VGS(on) =18V VGS(off) =0V RG(on) 1.0 RG(off) =0.2 Inductive Load
10
VDS =600V VGS(on) =18V VGS(off) =0V RG(on) 1.0 RG(off) =0.2 Inductive Load
15
Switching Loss [mJ]
Switching Time : t [ns]
200
Eon
10
5
Eoff Err
1
0 0
100
200
300
400
0
200
300
400
Drain Current : ID [A]
Drain Current : ID [A]
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
100
6/10
2018.02 - Rev.C
Datasheet
BSM180D12P2E002 Electrical characteristic curves (Typical)
Fig.13 Switching Loss vs. Drain Current [ Tj=125ºC ]
Fig.14 Switching Loss vs. Drain Current [ Tj=150ºC ]
15
VDS =600V VGS(on) =18V VGS(off) =0V RG(on) 1.0 RG(off) =0.2 Inductive Load
10
Eon
Switching Loss [mJ]
5 Eoff
VDS =600V VGS(on) =18V VGS(off) =0V RG(on) 1.0 RG(off) =0.2 Inductive Load
10
Eon
5 Eoff Err
Err 0
0 0
100
200
300
0
400
100
Drain Current : ID [A]
200
300
Drain Current : ID [A]
Fig.15 Recovery Characteristics vs. Drain Current [ Tj=25ºC ] 100
Fig.16 Recovery Characteristics vs. Drain Current [ Tj=125ºC ]
100
100
10
VDS =600V VGS(on) =18V VGS(off) =0V RG =1.0 Inductive Load 1
Recovery Time : trr [ns]
10
Recovery Current : Irr [A]
Recovery Time : trr [ns]
trr
1 100
200
300
trr 10
10
VDS =600V VGS(on) =18V VGS(off) =0V RG =1.0 Inductive Load 1
400
1 0
Drain Current : ID [A]
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
100
Irr
Irr
0
400
Recovery Current : Irr [A]
Switching Loss [mJ]
15
100
200
300
400
Drain Current : ID [A]
7/10
2018.02 - Rev.C
Datasheet
BSM180D12P2E002 Electrical characteristic curves (Typical)
Fig.17 Recovery Characteristics vs. Drain Current [ Tj=150ºC ] 100
Fig.18 Switching Characteristics vs. Gate Resistance [ Tj=25ºC ] 10000
100
10
10
VDS =600V VGS(on) =18V VGS(off) =0V RG =1.0 Inductive Load 1
Switching Time : t [ns]
trr
Recovery Current : Irr [A]
Recovery Time : trr [ns]
Irr
1000
100
100
200
300
10 0.1
400
Switching Time : t [ns]
Switching Time : t [ns]
100
10000 VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
td(off)
tr
tf
10
Fig.20 Switching Characteristics vs. Gate Resistance [ Tj=150ºC ]
10000
100
1
Gate Resistance : RG []
Fig.19 Switching Characteristics vs. Gate Resistance [ Tj=125ºC ]
1000
td(on)
tf
Drain Current : ID [A]
VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
td(off)
tr
1 0
VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
1000
td(off)
tr
100 td(on)
td(on)
tf
10
10 0.1
1
10
100
0.1
Gate Resistance : RG []
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
1
10
100
Gate Resistance : RG []
8/10
2018.02 - Rev.C
Datasheet
BSM180D12P2E002 Electrical characteristic curves (Typical)
Fig.21 Switching Loss vs. Gate Resistance [ Tj=25ºC ]
Fig.22 Switching Loss vs. Gate Resistance [ Tj=125ºC ] 60
60 VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
40 30
Switching Loss [mJ]
Switching Loss [mJ]
50
VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
50
Eon
20 10
Eoff
40
Eon 30 20 Eoff
10 Err
Err 0
0 0.1
1
10
0.1
100
1
Gate Resistance : RG []
100
Gate Resistance : RG []
Fig.23 Switching Loss vs. Gate Resistance [ Tj=150ºC ]
Fig.24 Typical Capacitance vs. Drain-Source Voltage
60
1.E-07 VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
40
Ciss
Capasitance : C [F]
50
Switching Loss [mJ]
10
Eon
30 20
Eoff
10 Err 1
10
100
Gate Resistance : RG []
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
Coss
1.E-09 Crss
Tj=25ºC VGS =0V 200kHz 1.E-10 0.01
0 0.1
1.E-08
1
100
Drain-Source Voltage : VDS [V]
9/10
2018.02 - Rev.C
Datasheet
BSM180D12P2E002 Electrical characteristic curves (Typical)
Fig.25 Gate Charge Characteristics [ Tj=25ºC ]
Gate-Source Voltage : VGS [V]
25
ID =180A VDS =600V Tj=25ºC
20
15
10
5
0 0
200
400
600
800
1000
1200
Normalized Transient Thermal Impedance : Zth
Fig.26 Normalized Transient Thermal Impedance
Total Gate charge : Qg [nC]
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
1
0.1 Single Pulse Tc=25ºC Per unit base DMOS part : 0.11K/W SBD part : 0.14K/W 0.01 0.0001
0.001
0.01
0.1
1
10
Time [s]
10/10
2018.02 - Rev.C
Notice
Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System http://www.rohm.com/contact/
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
R1107 S