SiC Power Module Datasheet
BSM180D12P2C101
Application
Circuit diagram
Motor drive
1
Inverter, Converter Photovoltaics, wind power generation.
10 9 8(N.C)
3,4
Induction heating equipment. 5 6 7(N.C)
Features
2
1) Low surge, low switching loss.
*Do not connnect to NC pin.
2) High-speed switching possible. 3) Reduced temperature dependence.
Construction This product is a half bridge module consisting of SiC-DMOS from ROHM.
Dimensions & Pin layout (Unit : mm)
3
10 9 8
7 6 5
4
1
2
(M2.6 FOR SELF-TAPPING SCREW)
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1/9
2017.10 - Rev.D
Datasheet
BSM180D12P2C101 Absolute maximum ratings (Tj = 25°C) Parameter Conditions Symbol VDSS G-S short Drain-source voltage Gate-source voltage() D-S short VGSS Gate-source voltage() D-S short G - S Voltage (tsurge<300nsec)VGSSsurge D-S short ID DC(Tc=60°C) Drain current *1 IDRM Pulse (Tc=60°C) 1ms *2 IS Tc=60°C VGS=18V 1
Source current *
Pulse (Tc=60°C) 1ms VGS=18V *
ISRM 4
Limit 1200 22
2
Pulse (Tc=60°C) 10s VGS=0V *
Total power disspation * Max Junction Temperature Storage temperature
Ptot Tc=25°C Tjmax Tstg
Isolation voltage
Visol
Terminals to baseplate, f=60Hz AC 1min.
2
40 to150 40 to125
Unit V V V °C A A A A A W °C °C
2500
Vrms
6 10 to 26 204 360 204 360 1360 175
4.5 Main Terminals : M6 screw N·m 3.5 Mounting to heat shink : M5 screw N·m (*1) Case temperature (Tc) is defined on the surface of base plate just under the chips. (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. (*3) Tj is less than 175°C
Mounting torque
Example of acceptable VGS waveform
26V tsurge
22V
0V
tsurge
6V 10V
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2/9
2017.10 - Rev.D
Datasheet
BSM180D12P2C101 Electrical characteristics (Tj=25°C) Parameter Symbol Static drain-source on-state voltage
Conditions
VDS(on) IC=180A, VGS=18V IDSS
Drain cutoff current
VDS=1200V, VGS=0V VGS=0V, IS=180A
VSD
Source-drain voltage
Tj=25°C Tj=125°C Tj=150°C
VGS=18V, IS=180A
Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C
Gate-source threshold voltage VGS(th) VDS=10V, ID=35.2mA VGS=22V, VDS=0V IGSS Gate-source leakage current VGS= 6V, VDS=0V td(on) tr trr td(off) tf Ciss RGint
Switching characteristics
Input capacitance Internal gate resistor Stray Inductance
VGS(on)=18V, VGS(off)=0V VDS=600V ID=180A RG=5.6 inductive load VDS=10V, VGS=0V, f=1MHz Tj=25°C
Ls
Creepage Distance
-
Clearance Distance
-
Terminal to heat sink Terminal to terminal Terminal to heat sink Terminal to terminal
Junction-to-case thermal resistance
Rth(j-c) DMOS (1/2 module) *5
Case-to-heat sink Thermal resistance
Rth(c-f)
Min. － － － － － － － － － － 1.6 － 0.5 － － － － － － － － － － -
Typ. 2.3 3.3 3.6 5.4 5.1 4.8 2.3 3.3 3.5 2.7 － － 80 90 50 300 90 23 1.15 25 11.5 19.0 9.5 13.0
Max. 3.2 4.4 5 10 － － － － － － 4 0.5 － － － － － － － － － － － -
－
－
0.11
-
0.035
-
Unit V A
V
V A
ns
nF nH mm mm mm mm
°C/W
Case to heat sink, per 1 module, 6 Thermal grease appied *
(*4) In order to prevent self turn-on, it is recommended to apply negative gate bias. (*5) Measurement of Tc is to be done at the point just under the chip. (*6) Typical value is measured by using thermally conductive grease of λ=0.9W/(m・K). (*7) SiC devices have lower short cuicuit withstand capability due to high current density. Please be advised to pay careful attention to short cuicuit accident and try to adjust protection time to shutdown them as short as possible. (*8) If the Product is used beyond absolute maximum ratings defined in the Specifications, as its internal structure may be dameged, please replace such Product with a new one.
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3/9
＜Wavelength for Switching Test＞ Eon=Id×Vds
Eoff=Id×Vds
trr Vsurge VDS 90%
ID
2%
90%
10%
10%
2%
2%
10%
2%
90% VGS
10%
td(on)
tr
td(off)
tf
2017.10 - Rev.D
Datasheet
BSM180D12P2C101 Electrical characteristic curves (Typical)
Fig.2 Drain-Source Voltage vs. Drain Current
Fig.1 Typical Output Characteristics 360
8
Drain-Source Voltage : VDS [V]
300
Drain Current : ID [A]
VGS =18V 240
VGS =18V
7
VGS =16V
VGS =14V
VGS =20V
180 VGS =12V
120 60
VGS =10V
0
6 Tj=125ºC
5
Tj=150ºC
4 3
Tj=25ºC
2 1 0
0
2
4
6
8
0
60
Drain-Source Voltage : VDS [V]
180
240
300
360
Drain Current : ID [A]
Fig.3 Drain-Source Voltage vs. Gate-Source Voltage
Fig.4 Ron vs Junction Temperature
8
0.04 Tj=25ºC
7 6
VGS=14V
0.03
VGS=12V
5 4
Ron []
Drain-Source Voltage : VDS [V]
120
ID=180A
3
ID=120A
2
VGS=16V VGS=18V VGS=20V
0.01
ID=80A
1
0.02
ID=40A
0
ID =180A
0 10
15
20
25
0
Gate-Source Voltage : VGS [V]
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50
100
150
200
250
Junction Temperature : Tj [ºC]
4/9
2017.10 - Rev.D
Datasheet
BSM180D12P2C101 Electrical characteristic curves (Typical)
Fig.5 Drain Current vs. Gate-Source Voltage
Fig.6 Drain Current vs. Gate-Source Voltage 360
1000 Tj=25ºC
Tj=150ºC 300
Drain Current : ID [A]
Drain Current : ID [A]
Tj=125ºC 100
Tj=150ºC
10
VGS =0V VGS =18V
Tj=25ºC VGS =0V
Tj=125ºC VGS =18V
1 0
2
4
Tj=25ºC
240
Tj=125ºC 180
Tj=150ºC
120
Tj=125ºC
0 0
6
Gate-Source Voltage : VGS [V]
2
4
6
Gate-Source Voltage : VGS [V]
Fig.8 Drain Current vs. Gate-Source Voltage
Fig.7 Drain Current vs. Gate-Source Voltage 360
1.E+03 VDS =20V
Drain Current : ID [A]
240
VDS =20V
1.E+02
300
Drain Current : ID [A]
Tj=150ºC
Tj=25ºC
60
Tj=150ºC
180 Tj=125ºC 120 60
Tj=25ºC
Tj=150ºC
1.E+01
Tj=125ºC
1.E+00
Tj=25ºC
1.E-01 1.E-02 1.E-03
0
1.E-04 0
5
10
15
0
10
15
Gate-Source Voltage : VGS [V]
Gate-Source Voltage : VGS [V]
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5
5/9
2017.10 - Rev.D
Datasheet
BSM180D12P2C101 Electrical characteristic curves (Typical)
Fig.10 Switching Characteristics [ Tj=125ºC ]
Fig.9 Switching Characteristics [ Tj=25ºC ] 1000
1000
tr
td(off)
tr td(off)
100 td(on)
10
VDS =600V VGS(on) =18V VGS(off) =0V RG =5.6 Inductive Load
Switching Time : t [ns]
Switching Time : t [ns]
tf
1
100 td(on) 10
VDS =600V VGS(on) =18V VGS(off) =0V RG =5.6 Inductive Load
1 0
100
200
300
0
400
Drain Current : ID [A]
100
200
300
400
Drain Current : ID [A]
Fig.11 Switching Loss vs. Drain Current [ Tj=25ºC ]
Fig.12 Switching Loss vs. Drain Current [ Tj=125ºC ]
30
30 VDS =600V VGS(on) =18V VGS(off) =0V RG =5.6 Inductive Load
20
VDS =600V VGS(on) =18V VGS(off) =0V RG =5.6 Inductive Load
25
Switching Loss [mJ]
25
Switching Loss [mJ]
tf
Eon
15 Eoff
10
20
Eon 15 10
Eoff
5
5
Err
Err 0
0 0
100
200
300
0
400
Drain Current : ID [A]
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100
200
300
400
Drain Current : ID [A]
6/9
2017.10 - Rev.D
Datasheet
BSM180D12P2C101 Electrical characteristic curves (Typical)
Fig.142 Recovery Characteristics vs. Drain Current [ Tj=125ºC ]
100
1000
100
trr
Irr
10
10
VDS =600V VGS(on) =18V VGS(off) =0V RG =5.6 Inductive Load
1000
Recovery Current : Irr [A] Recovery Time : trr [ns]
Recovery Time : trr [ns]
1000
trr 100
0
100
200
300
100 Irr
10
1
1
1000
1
1
400
0
100
Drain Current : ID [A]
200
300
400
Drain Current : ID [A]
Fig.15 Switching Characteristics vs. Gate Resistance [ Tj=25ºC ]
Fig.16 Switching Characteristics vs. Gate Resistance [ Tj=125ºC ] 10000
10000 VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
1000
VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
td(off)
Switching Time : t [ns]
Switching Time : t [ns]
10
VDS =600V VGS(on) =18V VGS(off) =0V RG =5.6 Inductive Load
Recovery Current : Irr [A]
Fig.13 Recovery Characteristics vs. Drain Current [ Tj=25ºC ]
tr
100
td(on) tf
1000
td(off)
tf
tr
100 td(on)
10
10 1
10
1
100
Gate Resistance : RG []
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10
100
Gate Resistance : RG []
7/9
2017.10 - Rev.D
Datasheet
BSM180D12P2C101 Electrical characteristic curves (Typical)
Fig.18 Switching Loss vs. Gate Resistance [ Tj=125ºC ]
20
20
18
18
16
16
14
14
12
Eoff
Eon
10
Switching Loss [mJ]
Switching Loss [mJ]
Fig.17 Switching Loss vs. Gate Resistance [ Tj=25ºC ]
8 VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
6 4 2
Err
12
Eon
10 8
VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
6 4 Err
2 0
0 1
10
1
100
Gate Resistance : RG []
10
100
Gate Resistance : RG []
Fig.19 Typical Capacitance vs. Drain-Source Voltage
Fig.20 Gate Charge Characteristics [ Tj=25ºC ] 25
1.E-07
ID =180A Tj=25ºC
1.E-08 Coss 1.E-09
1.E-10 Crss
Tj=25ºC VGS =0V 1.E-11 0.01
Gate-Source Voltage : VGS [V]
Ciss
Capasitance : C [nF]
Eoff
20
15
10
5
0 1
100
0
Drain-Source Voltage : VDS [V]
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500
1000
1500
Total Gate charge : Qg [nC]
8/9
2017.10 - Rev.D
Datasheet
BSM180D12P2C101 Electrical characteristic curves (Typical)
Normalized Transient Thermal Impedance : Rth
Fig.21 Normalized Transient Thermal Impedance 1 Single Pulse Tc=25ºC
Per unit base : 0.11ºC/W 0.1 0.001
0.01
0.1
1
10
Time [s]
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9/9
2017.10 - Rev.D
Notice
Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.
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R1107 S
