SiC Power Module Datasheet
BSM180C12P2E202 Application
Circuit diagram
Converter Photovoltaics, wind power generation. Induction heating equipment.
Features 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence.
Construction This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
Dimensions & Pin layout (Unit : mm)
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2017.11 - Rev.A
Datasheet
BSM180C12P2E202 Absolute maximum ratings (Tj = 25°C)
Conditions Limit Parameter Symbol Unit VDSS G-S short 1200 Drain-source voltage VDSS Clamp diode 1200 Repetitive reverse voltage 22 V Gate-source voltage() VGSS D-S short 6 Gate-source voltage() G - S Voltage (tsurge<300nsec) VGSS_surge D-S short 10 to 26 DC (Tc=60°C) ID 204 2 1 I 360 Pulse (T =60°C) 1ms * Drain current * DRM c IDRM Pulse (Tc=60°C) 10us *2 *3 540 IS DC (Tc=60°C ) VGS=18V 204 2 1 ISRM Pulse (Tc=60°C) 1ms VGS=18V * 360 A Source current * 2 3 ISRM Pulse (Tc=60°C) 10us VGS=18V * * 540 IF DC (Tc=60°C ) 204 2 1 IFRM Pulse (Tc=60°C) 1ms * 360 Forward current (clamp diode) * IFRM Pulse (Tc=60°C) 10us *2 *3 540 3 1360 Ptot Tc=25°C W Total power dissipation * Tjmax 175 Max Junction Temperature Operating junction temperature Tjop °C 40 to150 Tstg Storage temperature 40 to125 Terminals to baseplate, Isolation voltage Vrms Visol 2500 f=60Hz AC 1min. 4.5 Main Terminals : M6 screw Mounting torque N·m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (Tc) is defined on the surface of base plate just under the chips. (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tj max. (*3) Please use an appropriate external gate resistor not to exceed maximum ratings of Drain - Source Voltage. (*4) Tj is less than 175°C
Example of acceptable VGS waveform 26V tsurge
22V
0V
tsurge
6V 10V
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2017.11 - Rev.A
Datasheet
BSM180C12P2E202 Electrical characteristics (Tj=25°C) Parameter
Conditions
Symbol
On-state static Drain-Source Voltage
Tj=25°C Tj=125°C Tj=150°C
VDS(on) ID=180A, VGS=18V
Drain cutoff current
IDSS
VDS=1200V, VGS=0V
Forward Voltage
VF
IF=180A
Min. － － － － －
Tj=25°C Tj=125°C Tj=150°C
－ 1.6 － 0.5 － － － － － － -
Typ. 2.2 3.1 3.5 1.6 2.0 2.2 － － 49 36 20 139 32 20 1.2 5.0 3370 13.0 14.5 15.0 12.0 9.0 － －
Max. 3.2 － 5.0 10 2.2 3.3 3.2 4 0.5 － － － － － － － -
IRRM Clamp diode Gate-Source Threshold Voltage VGS(th) VDS=10V, ID=35.2mA VGS=22V, VDS=0V IGSS Gate-Source Leakage Current VGS= 6V, VDS=0V td(on) VGS(on)=18V, VGS(off)=0V tr VDS=600V ID=180A trr Switching Characteristics td(off) RG(on)=1.0, RG(off)=0.2 inductive load tf Input Capacitance Ciss VDS=10V, VGS=0V, 200kHz RGint Tj=25°C Gate Registance NTC Rated Resistance R25 NTC B Value B50/25 Stray Inductance Ls Terminal to heat sink Creepage Distance Terminal to terminal Terminal to heat sink Clearance Distance Terminal to terminal 0.11 － Junction-to-Case Thermal DMOSFET (1/2 module) *5 Rth(j-c) 5 Resistance 0.14 － SBD (1/2 module) * Case to heat sink, per 1 module, Case-to -heat sink Rth(c-f) 0.035 Thermal Resistance Thermal grease appied *6 (*5) Measurement of Tc is to be done at the point just beneath the chip. (*6) Typical value is measured by using thermally conductive grease of λ=0.9W/(m・K). (*7) If the Product is used beyond absolute maximum ratings defined in the Specifications, as its internal structure may be damaged, please replace such Product with a new one. Waveform for switching test Eon=Id×Vds Eoff=Id×Vds Reverse current
Unit V
A V mA V A
ns
nF k K nH mm mm mm mm K/W
trr Vsurge VDS 90%
ID
2%
90%
10%
10%
2%
2%
10%
2%
90% VGS
10%
td(on)
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td(off)
tr
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2017.11 - Rev.A
Datasheet
BSM180C12P2E202 Electrical characteristic curves (Typical)
Fig.1 Typical Output Characteristics [ Tj=25ºC ] 360
8
VGS =16V
300
VGS =18V VGS =20V
240
VGS =18V
7
Drain-Source Voltage : VDS [V]
Drain Current : ID [A]
Fig.2 Drain-Source Voltage vs. Drain Current
VGS =14V
180 120
VGS =12V
60 VGS =10V 0
6
Tj=125ºC
5
Tj=150ºC
4 3
Tj=25ºC
2 1 0
0
2
4
6
8
0
60
Drain-Source Voltage : VDS [V]
4
ID=180A ID=120A ID=90A
ID=60A
0 12
14
16
18
20
22
24
Static Drain - Source On-State Resistance : RDS(on) [m]
Drain-Source Voltage : VDS [V]
Tj=25ºC
1
300
360
40 35 VGS=12V
30
VGS=14V
25 20
VGS=16V
15
VGS=18V VGS=20V
10 5 ID =180A
0 0
50
100
150
200
250
Junction Temperature : Tj [ºC]
Gate-Source Voltage : VGS [V]
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240
Fig.4 Static Drain - Source On-State Resistance vs. Junction Temperature
5
2
180
Drain Current : ID [A]
Fig.3 Drain-Source Voltage vs. Gate-Source Voltage [ Tj=25ºC ]
3
120
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Datasheet
BSM180C12P2E202 Electrical characteristic curves (Typical)
Fig.5 Forward characteristic of Diode
Fig.6 Forward characteristic of Diode
1000
360 300
Forward Current : IF [A]
Forward Current : IF [A]
Tj=25ºC Tj=150ºC
100
Tj=125ºC
10
240 180 Tj=125ºC
120
60 0
1 0
1
2
3
0
4
1
2
3
4
Forward Voltage : VF [V]
Forward Voltage : VF [V]
Fig.8 Drain Current vs. Gate-Source Voltage
Fig.7 Drain Current vs. Gate-Source Voltage
1.E+03
360 VDS =20V
Drain Current : ID [A]
240 Tj=150ºC
180
Tj=125ºC
120
VDS =20V
1.E+02
300
Drain Current : ID [A]
Tj=150ºC
Tj=25ºC
60
Tj=150ºC
1.E+01
Tj=125ºC
1.E+00
Tj=25ºC
1.E-01 1.E-02 1.E-03
Tj=25ºC
1.E-04
0 0
5
10
0
15
10
15
Gate-Source Voltage : VGS [V]
Gate-Source Voltage : VGS [V]
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5
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2017.11 - Rev.A
Datasheet
BSM180C12P2E202 Electrical characteristic curves (Typical)
Fig.9 Switching Characteristics [ Tj=25ºC ]
Fig.10 Switching Characteristics [ Tj=125ºC ] 1000
1000
td(off)
100
Switching Time : t [ns]
Switching Time : t [ns]
td(off) td(on)
tf
tr
10
VDS =600V VGS(on) =18V VGS(off) =0V RG(on) 1.0 RG(off) =0.2 Inductive Load
100
td(on)
tf
tr
10
VDS =600V VGS(on) =18V VGS(off) =0V RG(on) 1.0 RG(off) =0.2 Inductive Load
1
1 0
100
200
300
0
400
100
Drain Current : ID [A]
300
400
Drain Current : ID [A]
Fig.11 Switching Characteristics [ Tj=150ºC ]
Fig.12 Switching Loss vs. Drain Current [ Tj=25ºC ] 8
1000
7 td(off) 100
6
Switching Loss [mJ]
Switching Time : t [ns]
200
td(on)
tf
tr
VDS =600V VGS(on) =18V VGS(off) =0V RG(on) 1.0 RG(off) =0.2 Inductive Load
10
5
VDS =600V VGS(on) =18V VGS(off) =0V RG(on) 1.0 RG(off) =0.2 Inductive Load
Eon
4 3 Eoff
2 1
Err
0
1 0
100
200
300
0
400
200
300
400
Drain Current : ID [A]
Drain Current : ID [A]
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100
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2017.11 - Rev.A
Datasheet
BSM180C12P2E202 Electrical characteristic curves (Typical)
Fig.13 Switching Loss vs. Drain Current [ Tj=125ºC ]
Fig.14 Switching Loss vs. Drain Current [ Tj=150ºC ]
8
8 VDS =600V VGS(on) =18V VGS(off) =0V RG(on) 1.0 RG(off) =0.2 Inductive Load
6 5
VDS =600V VGS(on) =18V VGS(off) =0V RG(on) 1.0 RG(off) =0.2 Inductive Load
7 6
Eon
4
Switching Loss [mJ]
Eoff
3 2 1
5
Eon
4 Eoff
3 2 1
Err
Err
0
0 0
100
200
300
400
0
100
Drain Current : ID [A]
200
100
Fig.16 Recovery Characteristics vs. Drain Current [ Tj=125ºC ] 100
100
VDS =600V VGS(on) =18V VGS(off) =0V RG(on) 1.0 RG(off) =0.2 Inductive Load 100
Recovery Time : trr [ns]
10
Recovery Current : Irr [A]
Recovery Time : trr [ns]
trr
0
300
10
VDS =600V VGS(on) =18V VGS(off) =0V RG(on) 1.0 RG(off) =0.2 Inductive Load 1 0
400
Drain Current : ID [A]
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trr
10
1
1 200
100
Irr
Irr
1
400
Drain Current : ID [A]
Fig.15 Recovery Characteristics vs. Drain Current [ Tj=25ºC ]
10
300
Recovery Current : Irr [A]
Switching Loss [mJ]
7
100
200
300
400
Drain Current : ID [A]
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2017.11 - Rev.A
Datasheet
BSM180C12P2E202 Electrical characteristic curves (Typical)
Fig.17 Recovery Characteristics vs. Drain Current [ Tj=150ºC ] 100
Fig.18 Switching Characteristics vs. Gate Resistance [ Tj=25ºC ] 10000
100
10
VDS =600V VGS(on) =18V VGS(off) =0V RG(on) 1.0 RG(off) =0.2 Inductive Load 1
Switching Time : t [ns]
trr
10
Recovery Current : Irr [A]
Recovery Time : trr [ns]
Irr 1000
100
100
200
300
0.1
400
1
10
100
Gate Resistance : RG []
Fig.20 Switching Characteristics vs. Gate Resistance [ Tj=150ºC ]
Fig.19 Switching Characteristics vs. Gate Resistance [ Tj=125ºC ] 10000
10000 VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
td(off)
Switching Time : t [ns]
Switching Time : t [ns]
tr
td(on)
tf
Drain Current : ID [A]
1000
td(off)
10
1 0
VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
tf 100
tr td(on)
1000
VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
td(off) tf
100
td(on) tr
10 0.1
1
10
10
100
0.1
Gate Resistance : RG []
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1
10
100
Gate Resistance : RG []
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2017.11 - Rev.A
Datasheet
BSM180C12P2E202 Electrical characteristic curves (Typical)
Fig.21 Switching Loss vs. Gate Resistance [ Tj=25ºC ]
Fig.22 Switching Loss vs. Gate Resistance [ Tj=125ºC ]
14
14 VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
10 8
VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
12
Switching Loss [mJ]
Switching Loss [mJ]
12
Eon
6 4
Eoff
2
10 8
Eon
6
Eoff
4 2
Err
Err
0
0 0.1
1
10
100
0.1
Gate Resistance : RG []
10
100
Gate Resistance : RG []
Fig.23 Switching Loss vs. Gate Resistance [ Tj=150ºC ]
Fig.24 Typical Capacitance vs. Drain-Source Voltage
14
1.E-07 VDS =600V ID =180A VGS(on) =18V VGS(off) =0V Inductive Load
10
Ciss
Capasitance : C [F]
12
Switching Loss [mJ]
1
Eon
8 6
Eoff
4
Err 0 1
10
1.E-09
1.E-10
1.E-11 0.01
100
Gate Resistance : RG []
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Coss
Tj=25ºC VGS =0V 200kHz
2
0.1
1.E-08
0.1
Crss
1
10
100
1000
Drain-Source Voltage : VDS [V]
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2017.11 - Rev.A
Datasheet
BSM180C12P2E202 Electrical characteristic curves (Typical)
Fig.25 Gate Charge Characteristics [ Tj=25ºC ] ID =180A Tj=25ºC VDS =600V
20
15
10
5
0 0
200
400
600
800
1000 1200
Normalized Transient Thermal Impedance : Zth
Gate-Source Voltage : VGS [V]
25
Fig.26 Normalized Transient Thermal Impedance
Total Gate charge : Qg [nC]
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1
0.1 Single Pulse Tc=25ºC Per unit base DMOS part : 0.11K/W SBD part : 0.14K/W 0.01 0.0001
0.001
0.01
0.1
1
10
Time [s]
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Notice
Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.
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R1107 S
